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PTFA070601EV4R250XTMA1

Description
FET RF LDMOS 60W H36265-2
Categorysemiconductor    Discrete semiconductor   
File Size249KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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PTFA070601EV4R250XTMA1 Overview

FET RF LDMOS 60W H36265-2

PTFA070601EV4R250XTMA1 Parametric

Parameter NameAttribute value
Transistor typeLDMOS
frequency760MHz
Gain19.5dB
Voltage - Test28V
Rated current-
Noise Figure-
Current - Test600mA
Power - output60W
Voltage - Rated65V
Package/casingH-36265-2
Supplier device packagingH-36265-2
PTFA070601E
PTFA070601F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
60 W, 725 – 770 MHz
Description
The PTFA070601E and PTFA070601F are 60-watt LDMOS FETs
designed for cellular power amplifier applications in the 725 to 770
MHz band. Features include input matching and thermally-enhanced
packages with slotted or earless flanges. Manufactured with Infineon's
advanced LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTFA070601E
Package H-36265-2
PTFA070601F
Package H-37265-2
2-Carrier WCDMA Performance
V
DD
= 28 V, I
DQ
= 600 m A, ƒ = 760 MHz, 3GPP WCDMA
s ignal, P/A R = 8 dB, 10 MHz carrier spacing
-25
-30
55
50
Features
Broadband internal matching
Typical WCDMA performance, 760 MHz, 28 V
- Average output power = 12 W
- Gain = 19 dB
- Efficiency = 29%
Typical CW performance, 760 MHz, 28 V
- Output power at P–1dB = 60 W
- Gain = 19 dB
- Efficiency = 72%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 28 V, 60 W
(CW) output power
Pb-free and RoHS-compliant
IM3 (dBc), ACPR (dBc)
45
-35
-40
-45
-50
-55
29
31
33
Efficiency
IM3
40
35
30
25
20
15
Drain Efficiency (%)
ACPR
35
37
39
41
43
45
47
10
5
Output Power, avg. (dBm )
RF Characteristics
WCDMA Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 600 mA, P
OUT
= 12 W AVG, ƒ = 760 MHz
Characteristic
Intermodulation Distortion
Gain
Drain Efficiency
Symbol
IMD
G
ps
Min
Typ
–37
19
29
Max
Unit
dBc
dB
%
η
D
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
*See Infineon distributor for future availability.
Rev. 01, 2009-04-16

PTFA070601EV4R250XTMA1 Related Products

PTFA070601EV4R250XTMA1 PTFA070601EV4XWSA1 PTFA070601FV4R250XTMA1 PTFA070601FV4XWSA1
Description FET RF LDMOS 60W H36265-2 FET RF LDMOS 60W H36265-2 FET RF LDMOS 60W H37265-3 FET RF LDMOS 60W H37265-2
Transistor type LDMOS LDMOS LDMOS LDMOS
frequency 760MHz 760MHz 760MHz 760MHz
Gain 19.5dB 19.5dB 19.5dB 19.5dB
Voltage - Test 28V 28V 28V 28V
Current - Test 600mA 600mA 600mA 600mA
Power - output 60W 60W 60W 60W
Voltage - Rated 65V 65V 65V 65V
Package/casing H-36265-2 H-36265-2 2-Flat package, blade leads, with flange 2-Flat package, blade leads, with flange
Supplier device packaging H-36265-2 H-36265-2 H-37265-2 H-37265-2
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