AON6264E
60V N-Channel AlphaSGT
TM
General Description
• Trench Power AlphaSGT
TM
technology
• Low R
DS(ON)
• Low Gate Charge
• ESD protected
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=4.5V)
Typical ESD protection
60V
28A
< 9.5mΩ
< 13.3mΩ
HBM Class 2
Applications
• High efficiency power supply
• Secondary synchronus rectifier
100% UIS Tested
100% Rg Tested
DFN5x6
Top View
Bottom View
1
2
3
D
Top View
8
7
6
5
G
PIN1
PIN1
4
S
Orderable Part Number
AON6264E
Package Type
DFN 5x6
Form
Tape & Reel
Minimum Order Quantity
3000
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy
V
DS
Spike
I
C
Symbol
V
DS
V
GS
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
L=0.3mH
10µs
T
C
=25°C
C
Maximum
60
±20
28
28
110
17
13.5
17
43
72
37.5
15.0
5.0
3.2
-55 to 150
Units
V
V
A
I
D
I
DM
I
DSM
I
AS
E
AS
V
SPIKE
P
D
P
DSM
T
J
, T
STG
A
A
mJ
V
W
W
°C
Power Dissipation
Power Dissipation
B
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
20
45
2.7
Max
25
55
3.3
Units
°C/W
°C/W
°C/W
Rev.1.0: May 2016
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Page 1 of 6
AON6264E
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=60V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS,
I
D
=250µA
V
GS
=10V, I
D
=20A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=20A
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=20A
I
S
=1A, V
GS
=0V
G
Min
60
Typ
Max
Units
V
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
1
5
±10
1.4
T
J
=125°C
1.8
7.7
12.5
10.3
52
0.72
1
28
1100
2.4
9.5
15.5
13.3
µA
µA
V
mΩ
mΩ
S
V
A
pF
pF
pF
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
C
iss
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
f=1MHz
0.6
V
GS
=0V, V
DS
=30V, f=1MHz
300
28
1.2
14.5
2.0
25
13
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
SWITCHING PARAMETERS
Total Gate Charge
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=20A, di/dt=500A/µs
Body Diode Reverse Recovery Charge I
F
=20A, di/dt=500A/µs
V
GS
=10V, V
DS
=30V, R
L
=1.5Ω,
R
GEN
=3Ω
V
GS
=10V, V
DS
=30V, I
D
=20A
7
2.5
3.5
6.5
3.5
22
3
19
65
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The Power
dissipation P
DSM
is based on R
θJA
t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T
J(MAX)
=150°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
I. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: May 2016
www.aosmd.com
Page 2 of 6
AON6264E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V
80
6V
4.5V
4V
80
100
V
DS
=5V
60
I
D
(A)
3.5V
40
3.0V
20
V
GS
=2.5V
0
0
1
2
3
4
5
I
D
(A)
60
40
125°C
20
25°C
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Region Characteristics (Note E)
12
Normalized On-Resistance
V
GS
=4.5V
10
R
DS(ON)
(mΩ)
2
1.8
1.6
1.4
1.2
1
0.8
0
5
10
15
20
25
30
0
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
V
GS
=10V
I
D
=20A
8
V
GS
=10V
6
V
GS
=4.5V
I
D
=20A
4
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
35
I
D
=20A
30
25
R
DS(ON)
(mΩ)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+01
1.0E+00
1.0E-01
125°C
20
15
10
5
0
2
4
6
125°C
I
S
(A)
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
25°C
8
10
0.0
0.2
0.4
0.6
0.8
1.0
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
(Note E)
Rev.1.0: May 2016
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Page 3 of 6
AON6264E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=30V
I
D
=20A
8
Capacitance (pF)
1500
1200
C
iss
V
GS
(Volts)
6
900
4
600
C
oss
300
C
rss
2
0
0
3
6
9
12
15
0
0
10
20
30
40
50
60
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1000.0
10µs
500
V
DS
(Volts)
Figure 8: Capacitance Characteristics
T
J(Max)
=150°C
T
C
=25°C
400
100.0
Power (W)
R
DS(ON)
limited
I
D
(Amps)
10.0
10µs
100µs
1ms
10ms
300
1.0
200
0.1
T
J(Max)
=150°C
T
C
=25°C
DC
100
0.0
0.01
0.1
1
V
DS
(Volts)
V
GS
> or equal to 4.5V
10
100
0
0.0001
0.001
0.01
0.1
1
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
Z
θJC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=3.3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Single Pulse
P
DM
T
on
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: May 2016
www.aosmd.com
Page 4 of 6
AON6264E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
40
40
Power Dissipation (W)
30
30
Current rating I
D
(A)
0
25
50
75
100
125
150
20
20
10
10
0
T
CASE
(°C)
Figure 12: Power De-rating (Note F)
0
0
25
50
75
100
125
150
T
CASE
(°C)
Figure 13: Current De-rating (Note F)
10000
T
A
=25°C
1000
Power (W)
100
10
1
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
Z
θJA
Normalized Transient
Thermal Resistance
10
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
DM
0.01
Single Pulse
T
on
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: May 2016
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Page 5 of 6
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