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IRG4PC30U

Description
IGBT 600V 23A 100W TO247AC
CategoryDiscrete semiconductor    The transistor   
File Size149KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IRG4PC30U Overview

IGBT 600V 23A 100W TO247AC

IRG4PC30U Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionTO-3P, 3 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresULTRA FAST SWITCHING
Shell connectionCOLLECTOR
Maximum collector current (IC)23 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
JEDEC-95 codeTO-247AC
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)320 ns
Nominal on time (ton)33 ns
Base Number Matches1
PD 91461E
IRG4PC30U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
C
UltraFast Speed IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.95V
@V
GE
= 15V, I
C
= 12A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
600
23
12
92
92
± 20
10
100
42
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.24
–––
6 (0.21)
Max.
1.2
–––
40
–––
Units
°C/W
g (oz)
www.irf.com
1
12/30/00

IRG4PC30U Related Products

IRG4PC30U IRG4PC30U-E
Description IGBT 600V 23A 100W TO247AC Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
Is it Rohs certified? conform to incompatible
Maker Infineon Infineon
package instruction TO-3P, 3 PIN TO-247AD, 3 PIN
Reach Compliance Code compliant unknown
Other features ULTRA FAST SWITCHING ULTRA FAST SWITCHING
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 23 A 23 A
Collector-emitter maximum voltage 600 V 600 V
Configuration SINGLE SINGLE
JEDEC-95 code TO-247AC TO-247AD
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications POWER CONTROL POWER CONTROL
Transistor component materials SILICON SILICON
Nominal off time (toff) 320 ns 320 ns
Nominal on time (ton) 33 ns 33 ns
Base Number Matches 1 1
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