Data Sheet No.PD60144-K
IPS0151
(
S
)
FULLY PROTECTED POWER MOSFET SWITCH
Features
•
•
•
•
•
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
Product Summary
R
ds(on)
V
clamp
I
shutdown
T
on
/T
off
25m
Ω
(max)
50V
35A
1.5µs
Description
The IPS0151/IPS0151S are fully protected three terminal
SMART POWER MOSFETs that feature over-current,
over-temperature, ESD protection and drain to source
active clamp.These devices combine a HEXFET
®
POWER MOSFET and a gate driver. They offer full
protection and high reliability required in harsh envi-
ronments. The driver allows short switching times
and provides efficient protection by turning OFF the
power MOSFET when the temperature exceeds 165
o
C
or when the drain current reaches 35A. The device
restarts once the input is cycled. The avalanche
capability is significantly enhanced by the active
clamp and covers most inductive load demagnetiza-
tions.
Packages
3-Lead D
2
Pak
IPS0151S
Typical Connection
3-Lead TO-220
PS0151
L o ad
D
IN
c o n t ro l
R in se rie s
( if n e e d e d )
L o g ic sig n a l
S
(Refer to lead assignment for correct pin configuration)
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IPS0151(S)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25
o
C unless otherwise specified). PCB mounting uses the standard foot-
print with 70
µm
copper thickness.
Symbol Parameter
Vds
Vin
Iin, max
Isd
cont.
Maximum drain to source voltage
Maximum Input voltage
Maximum IN current
Diode max. continuous current
(1)
rth=62
o
C/W IPS0151
rth=5
o
C/W IPS015135
rth=80
o
C/W IPS0151S
Isd
pulsed
Diode max. pulsed current
(1)
Pd
Maximum power dissipation
(1)
(rth=62
o
C/W) IPS0151
(rth=80
o
C/W)
ESD1
ESD2
T stor.
Tj max.
Tlead
IPS0151S
Electrostatic discharge voltage
(Human Body)
Electrostatic discharge voltage
(Machine Model)
Max. storage temperature
Max. junction temperature
Lead temperature (soldering, 10 seconds)
Min.
—
-0.3
-10
—
—
—
—
—
—
—
—
-55
-40
—
Max.
47
7
+10
2.8
35
2.2
45
2
1.56
4
0.5
150
+150
300
Units
V
mA
Test Conditions
TO220 free air
A
TO220 with Rth=5
o
C/W
SMD220 Std footprint
W
C=100pF, R=1500Ω,
kV
C=200pF, R=0Ω, L=10µH
o
C
Thermal Characteristics
Symbol Parameter
Rth
Rth
Rth
Rth
Rth
1
2
1
2
3
Thermal
Thermal
Thermal
Thermal
Thermal
resistance
resistance
resistance
resistance
resistance
free air
junction to case
with standard footprint
with 1" square footprint
junction to case
Min.
—
—
—
—
—
Typ.
55
2
60
35
2
Max. Units Test Conditions
—
a
—
—
—
TO-220
o
C/W
D
2
PAK (SMD220)
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Continuous drain to source voltage
High level input voltage
Low level input voltage
Continuous drain current
o
Tamb=85 C
(TAmbient = 85
o
C, IN = 5V, rth = 60
o
C/W, Tj = 125
o
C) IPS0151
(TAmbient = 85
o
C, IN = 5V, rth = 80
o
C/W, Tj = 125
o
C) IPS0151S
Rin
Recommended resistor in series with IN pin
Tr-in (max) Max recommended rise time for IN signal (see fig. 2)
Fr-Isc
(2)
Max. frequency in short circuit condition (Vcc = 14V)
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Application Notes.
Vds (max)
VIH
VIL
I ds
Min.
—
4
0
—
—
0.2
—
0
Max.
35
6
0.5
4.3
3.8
5
1
1
Units
V
A
k
Ω
µ
S
kHz
2
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IPS0151(S)
Static Electrical Characteristics
(Tj = 25
o
C unless otherwise specified.)
Symbol Parameter
Rds(on)
Idss1
@Tj=25
o
C
Min.
o
Typ.
20
35
0.5
5
52
55
8.1
1.6
90
130
Max. Units Test Conditions
25
45
25
50
56
60
9.5
2
200
250
mΩ
Vin = 5V, Ids = 1A
Vcc = 14V, Tj = 25
o
C
µA
Vcc = 40V, Tj = 25
o
C
Id = 20mA
(see Fig.3 & 4)
Id=Ishutdown
(see Fig.3 & 4)
Iin = 1 mA
Id = 50mA, Vds = 14V
Vin = 5V
Vin = 5V
over-current triggered
ON state resistance Tj = 25 C
Tj = 150
o
C
Drain to source leakage current
Drain to source leakage current
Drain to source clamp voltage 1
Drain to source clamp voltage 2
IN to source clamp voltage
IN threshold voltage
ON state IN positive current
OFF state IN positive current
10
—
0
0
47
50
7
1
25
50
Idss2
@Tj=25
o
C
V
clamp 1
V
clamp 2
Vin
clamp
Vin
th
Iin, -on
Iin, -off
V
µA
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 3Ω, Rinput = 50Ω, 100us pulse, T
j
= 25
o
C, (unless otherwise specified).
Symbol
Parameter
Ton
Tr
Trf
T off
Tf
Qin
Turn-on delay time
Rise time
Time to (final Rds(on) 1.3%)
Turn-off delay time
Fall time
Total gate charge
Min.
0.05
0.2
—
0.8
0.4
—
Typ. Max. Units Test Conditions
0.25
0.9
3.8
1.5
1.1
30
0.6
1.5
—
2
2
—
See figure 2
µs
See figure 2
nC
Vin = 5V
Protection Characteristics
Symbol Parameter
T sd
I sd
V
reset
Treset
EOI_OT
Over temperature threshold
Over current threshold
IN protection reset threshold
Time to reset protection
Short circuit energy (see application note)
Min.
—
20
1.5
2
—
Typ.
165
35
2.3
10
400
Max. Units Test Conditions
—
50
3
40
—
o
C
A
V
µs
See fig. 1
See fig. 1
Vin = 0V, Tj = 25
o
C
Vcc = 14V
µJ
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IPS0151(S)
Functional Block Diagram
All values are typical
DRAIN
47 V
200
Ω
200 k
Ω
IN
8.1 V
80
µ
A
S
R
Q
Q
I sense
T > 165°c
I > Isd
SOURCE
Lead Assignments
2 (D)
2 (D)
1
3
In D S
1
In
2
D
3
S
TO-220
IPS0151
Part Number
D
2
PAK (SMD220)
IPS0151S
4
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IPS0151(S)
Vin
5V
0V
Vin
10 %
t < T reset
I shutdown
t > T reset
90 %
Tr-in
Ids
Isd
90 %
Ids
10 %
Td on
tr
Td off
tf
T
Tsd
(165 °c)
T shutdown
Vds
Figure 1 - Timing diagram
Figure 2 - IN rise time & switching time definitions
T clamp
Vin
L
Rem : V load is negative
during demagnetization
V load
+
R
D
14 V
-
Ids
Vds clamp
Vin
( Vcc )
5v
0v
IN
S
Vds
Ids
Vds
( see Appl . Notes to evaluate power dissipation )
Figure 3 - Active clamp waveforms
Figure 4 - Active clamp test circuit
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