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IPS031GTR

Description
IC MOSFET PWR SW SGL 12A 8-SOIC
Categorysemiconductor    Power management   
File Size127KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

IPS031GTR Overview

IC MOSFET PWR SW SGL 12A 8-SOIC

IPS031GTR Parametric

Parameter NameAttribute value
Switch typeUniversal
Number of outputs1
Ratio - Input:Output1:1
Output configurationlow end
Output typeN channel
interfaceswitch
Voltage - Load35V (maximum)
Voltage - Power Supply (Vcc/Vdd)unnecessary
Current - Output (maximum)2.2A
On-resistance (typ.)45 milliohms
input typenon-inverting
characteristic-
failsafeCurrent limit (fixed), over temperature
Operating temperature-40°C ~ 150°C(TJ)
Package/casing8-SOIC (0.154", 3.90mm wide)
Supplier device packaging8-SO
Data Sheet No.PD 60151-J
IPS031G/IPS032G
SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH
Features
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
Product Summary
R
ds(on)
V
clamp
Ishutdown
70m
(max)
50V
12A
1.5µs
Description
The IPS031G/IPS032G are fully protected single/dual
low side SMART POWER MOSFETs that feature over-
current, over-temperature, ESD protection and drain
to source active clamp.These devices combine a
HEXFET ® POWER MOSFET and a gate driver. They
offer full protection and high reliability required in
harsh environments. The driver allows short switch-
ing times and provides efficient protection by turning
off the power MOSFET when the temperature ex-
ceeds 165
o
C or when the drain current reaches 12A.
The device restarts once the input is cycled. The
avalanche capability is significantly enhanced by the
active clamp and covers most inductive load demag-
netizations.
T
on
/T
off
Packages
8-Lead SOIC
IPS031G
Typical Connection
16-Lead SOIC
IPS032G
(Dual)
Load
R in series
(if needed)
D
IN
control
S
Q
S
Logic signal
(Refer to lead assignment for correct pin assignment)
www.irf.com
1

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