Data Sheet No.PD 60151-J
IPS031G/IPS032G
SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH
Features
•
•
•
•
•
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
Product Summary
R
ds(on)
V
clamp
Ishutdown
70m
Ω
(max)
50V
12A
1.5µs
Description
The IPS031G/IPS032G are fully protected single/dual
low side SMART POWER MOSFETs that feature over-
current, over-temperature, ESD protection and drain
to source active clamp.These devices combine a
HEXFET ® POWER MOSFET and a gate driver. They
offer full protection and high reliability required in
harsh environments. The driver allows short switch-
ing times and provides efficient protection by turning
off the power MOSFET when the temperature ex-
ceeds 165
o
C or when the drain current reaches 12A.
The device restarts once the input is cycled. The
avalanche capability is significantly enhanced by the
active clamp and covers most inductive load demag-
netizations.
T
on
/T
off
Packages
8-Lead SOIC
IPS031G
Typical Connection
16-Lead SOIC
IPS032G
(Dual)
Load
R in series
(if needed)
D
IN
control
S
Q
S
Logic signal
(Refer to lead assignment for correct pin assignment)
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1
IPS031G/IPS032G
31
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are ref-
erenced to SOURCE lead. (TAmbient = 25
o
C unless otherwise specified). PCB mounting uses the standard footprint with 70
µm
copper thickness. All Sources leads of each mosfet must be connected together to get full current capability
Symbol Parameter
Vds
Vin
Iin, max
Isd
cont.
Maximum drain to source voltage
Maximum input voltage
Maximum IN current
Diode max. continuous current
(1)
(rth=125
o
C/W) IPS031G
(for all sd mosfets, rth=85
o
C/W) IPS032G
Isd
pulsed
Diode max. pulsed current
(1) (for ea. mosfet)
Pd
Maximum power dissipation
(1)
(rth=125
o
C/W) IPS031G
(for all Pd mosfets, rth=85
o
C/W) IPS032G
ESD1
ESD2
T stor.
Tj max.
Electrostatic discharge voltage
(Human Body)
Electrostatic discharge voltage
(Machine Model)
Max. storage temperature
Max. junction temperature
Min.
—
-0.3
-10
—
—
—
—
—
—
—
-55
-40
Max.
47
7
+10
1.4
2
15
1
1.5
4
0.5
150
150
Units
V
mA
Test Conditions
A
W
kV
o
C=100pF, R=1500Ω,
C=200pF, R=0Ω, L=10µH
C
Thermal Chacteristics
Symbol Parameter
Rth1
Thermal resistance
Rth2
Thermal resistance
Rth1
Thermal resistance
(2 mos on)
(2 mosfets on)
Rth2
Thermal resistance
(1 mos on)
(1 mosfet on)
Rth3
Thermal resistance
(2 mos on)
(2 mosfets on)
with standard footprint
with 1" square footprint
with standard footprint
with standard footprint
—
with 1" square footprint
—
60
—
100
—
Min.
—
—
—
Typ.
100
65
85
Max. Units Test Conditions
—
—
—
o
SOIC-8
C/W
SOIC-16
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
2
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IPS031G/IPS032G
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Vds (max) Continuous Drain to Source voltage
VIH
High level input voltage
VIL
Low level input voltage
Ids
Continuous drain current
o
Tamb=85 C
(TAmbient = 85
o
C, IN = 5V, rth = 100
o
C/W, Tj = 125
o
C) IPS031G
(TAmbient = 85
o
C, IN = 5V, rth = 85
o
C/W, Tj = 125
o
C) IPS032G
Rin
Recommended resistor in series with IN pin
Tr-in(max) Max recommended rise time for IN signal (see fig. 2)
Fr-I sc
(2)
Max. frequency in short circuit condition (Vcc = 14V)
Min.
—
4
0
—
—
0.2
—
0
Max.
35
6
0.5
2.2
1.65
5
1
1
Units
V
A
k
Ω
µ
S
kHz
Static Electrical Characteristics
(T j = 25
o
C unless otherwise specified.)
Symbol Parameter
Rds(on)
Rds(on)
Idss
@Tj=25
o
C
Min.
o
Typ.
45
75
0.5
5
52
53
8.1
1.6
90
130
Max. Units Test Conditions
60
100
25
50
56
60
9.5
2
200
250
mΩ
Vin = 5V, Ids = 1A
Vcc = 14V, Tj = 25
o
C
µA
Vcc = 40V, Tj = 25
o
C
Id = 20mA
(see Fig.3 & 4)
Id=Ishutdown
(see Fig.3 & 4)
Iin = 1 mA
Id = 50mA, Vds = 14V
Vin = 5V
Vin = 5V
over-current triggered
ON state resistance Tj = 25 C
ON state resistance Tj = 150
o
C
Drain to source leakage current
Drain to source leakage current
Drain to source clamp voltage 1
Drain to source clamp voltage 2
IN to source clamp voltage
IN threshold voltage
ON state IN positive current
OFF state IN positive current
20
—
0
0
47
50
7
1
25
50
Idss2
@Tj=25
o
C
V
clamp 1
V
clamp 2
Vin
clamp
Vth
Iin , -on
Iin, -off
V
µA
Switching Electrical Characteristics
Symbol
Parameter
Ton
Tr
Trf
T off
Tf
Qin
Turn-on delay time
Rise time
Time to 130% final Rds(on)
Turn-off delay time
Fall time
Total gate charge
Vcc = 14V, Resistive Load = 5Ω (IPS031), Resistive Load = 3Ω (IPS031S), Rinput = 50Ω, 100
µ
s pulse,T
j
= 25
o
C, (unless
otherwise specified).
Min.
0.05
0.4
—
0.8
0.5
—
Typ. Max. Units Test Conditions
0.3
1
8
2
1.5
1.1
0.6
2
—
3.5
2.5
—
See figure 2
µ
s
See figure 2
nC
Vin = 5V
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IPS031G/IPS032G
Protection Characteristics
Symbol Parameter
T sd
I sd
V
reset
Treset
EOI_OT
Over temperature threshold
Over current threshold
IN protection reset threshold
Time to reset protection
Short circuit energy (see application note)
Min.
—
10
1.5
2
—
Typ.
165
14
2.3
10
400
Max. Units Test Conditions
—
18
3
40
—
o
C
A
V
µs
µJ
See fig. 1
See fig. 1
Vin = 0V, Tj = 25
o
C
Vcc = 14V
Functional Block Diagram
All values are typical
DRAIN
47 V
300
Ω
200 k
Ω
IN
8.1 V
80
µ
A
S
R
Q
Q
I sense
T > 165°c
I > 1sd
SOURCE
Lead Assignments
D
D
D
D
D1 D1 D1 D1 D2 D2 D2 D2
1
1
S
S
S
In
S1 S1 S1 I1 S2 S2 S2 I2
8 Lead SOIC
16 Lead SOIC
(Dual)
IPS032G
Part Number
IPS031G
4
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IPS031G/IPS032G
Vin
5V
0V
Vin
10 %
t < T reset
I shutdown
t > T reset
90 %
Ids
Isd
Tr-in
90 %
Ids
T
Tsd
(165 °c)
10 %
Td on
tr
T shutdown
Td off
tf
Vds
Figure 1 - Timing diagram
Figure 2 - IN rise time & switching time definitions
T clamp
Vin
Rem : V load is negative
during demagnetization
L
R
D
IN
S
V load
+
14 V
-
Ids
Vds clamp
Vin
( Vcc )
5v
0v
Vds
Ids
Vds
( see Appl . Notes to evaluate power dissipation )
Figure 3 - Active clamp waveforms
Figure 4 - Active clamp test circuit
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