Bulletin PD-21071 rev. A 12/06
30CTH02SPbF
30CTH02-1PbF
Hyperfast Rectifier
Features
•
•
•
•
•
Hyperfast Recovery Time
Low Forward Voltage Drop
Low Leakage Current
175°C Operating Junction Temperature
Lead-Free ("PbF" suffix)
t
rr
=30ns max.
I
F(AV)
= 30Amp
V
R
= 200V
Description/ Applications
International Rectifier's 200V series are the state of the art Hyperfast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as
free-wheeling diode in low voltage inverters and chopper motor drives.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters
V
RRM
I
F(AV)
I
FSM
T
J
, T
STG
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
@ T
C
= 159°C Per Diode
Per Device
Non Repetitive Peak Surge Current @ T
J
= 25°C
Operating Junction and Storage Temperatures
Max
200
15
30
200
- 65 to 175
Units
V
A
°C
Case Styles
30CTH02SPbF
30CTH02-1PbF
Base
Common
Cathode
2
Base
Common
Cathode
2
1
Anode
2
Common
Cathode
3
1
Anode
Anode
2
Common
Cathode
3
Anode
D
2
PAK
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TO-262
1
30CTH02SPbF, 30CTH02-1PbF
Bulletin PD-21071 rev. A
12/06
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
V
BR
, V
r
V
F
Breakdown Voltage,
Blocking Voltage
Forward Voltage
Min Typ Max Units Test Conditions
200
-
-
-
-
V
V
V
μA
μA
pF
nH
I
R
= 100μA
I
F
= 15A, T
J
= 25°C
I
F
= 15A, T
J
= 125°C
V
R
= V
R
Rated
T
J
= 125°C, V
R
= V
R
Rated
V
R
= 200V
Measured lead to lead 5mm from package body
0.92 1.05
0.78 0.85
-
5
57
8
10
300
-
-
I
R
Reverse Leakage Current
-
-
C
T
L
S
Junction Capacitance
Series Inductance
-
-
Dynamic Recovery Characteristics @ T
C
= 25°C (unless otherwise specified)
Parameters
t
rr
Reverse Recovery Time
Min Typ Max Units Test Conditions
-
-
-
-
-
-
26
40
2.8
6.0
37
120
35
30
-
-
-
-
-
-
nC
A
ns
I
F
= 1A, di
F
/dt = 50A/μs, V
R
= 30V
I
F
= 1A, di
F
/dt = 100A/μs, V
R
= 30V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
= 15A
di
F
/dt = 200A/μs
V
R
= 160V
I
RRM
Peak Recovery Current
-
-
Q
rr
Reverse Recovery Charge
-
-
Thermal - Mechanical Characteristics
Parameters
T
J
T
Stg
R
thJC
Max. Junction Temperature Range
Max. Storage Temperature Range
Thermal Resistance, Junction to Case
Weight
Mounting Torque
Marking Device
Per Diode
Min
- 65
- 65
-
-
-
6.0
5.0
Typ
-
-
-
2.0
0.07
-
-
Max
175
175
1.1
-
-
12
10
Units
°C
°C/W
g
(oz)
Kg-cm
lbf.in
30CTH02S
30CTH02-1
Case style D
2
Pak
Case style TO-262
2
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30CTH02SPbF, 30CTH02-1PbF
Bulletin PD-21071 rev. A
12/06
100
(μ A)
100
Tj = 175˚C
10
1
0.1
0.01
0.001
150˚C
125˚C
100˚C
75˚C
50˚C
25˚C
Instantaneous Forward Current - I
Tj = 175˚C
Tj = 125˚C
Reverse Current - I
F
(A)
R
0.0001
0
50
100
150
200
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
10
Tj = 25˚C
1000
(pF)
T J = 25˚C
Junction Capacitance - C
T
100
1
0.4
10
0.6
0.8
1
1.2
1.4
1.6
0
50
100
150
200
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
10
(°C/W)
thJC
Thermal Impedance Z
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Notes:
P
DM
t1
t2
0.1
Single Pulse
(Thermal Resistance)
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
10
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3
30CTH02SPbF, 30CTH02-1PbF
Bulletin PD-21071 rev. A
12/06
180
Allowable Case Temperature (°C)
Average Power Loss ( Watts )
25
20
15
10
5
0
0
5
10
15
20
F(AV)
170
DC
RMS Limit
160
Square wave (D = 0.50)
150
Rated Vr applied
see note (2)
DC
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
140
25
Average Forward Current - I
(A)
0
Average Forward Current - I
F
(AV)
(A)
5
10
15
20
25
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
100
IF = 15 A
1000
IF = 15 A
Qrr ( nC )
V
R
= 390V
T
J
= 125˚C
T
J
= 25˚C
trr ( ns )
100
V
R
= 390V
T
J
= 125˚C
T
J
= 25˚C
10
100
1000
10
100
1000
di
F
/dt (A/μs )
Fig. 7 - Typical Reverse Recovery vs. di
F
/dt
di
F
/dt (A/μs )
Fig. 8 - Typical Stored Charge vs. di
F
/dt
(2)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
; Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 8);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= rated V
R
4
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30CTH02SPbF, 30CTH02-1PbF
Bulletin PD-21071 rev. A
12/06
Reverse Recovery Circuit
V
R
= 200V
0.01
Ω
L = 70µH
D.U.T.
dif/dt
ADJUST
di
F
/dt
D
G
IRFP250
S
Fig. 9- Reverse Recovery Parameter Test Circuit
3
I
F
0
t
rr
t
a
t
b
4
Q
rr
2
I
RRM
0.5 I
RRM
di(rec)M/dt
0.75 I
RRM
5
1
di
F
/dt
f
1. di
F
/dt - Rate of change of current through zero
crossing
2. I
RRM
- Peak reverse recovery current
3. t
rr
- Reverse recovery time measured from zero
crossing point of negative going I
F
to point where
a line passing through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
x I
RRM
Q
rr
=
2
5. di
(rec) M
/ dt - Peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
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