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DSEE15-06CC

Description
DIODE ARRAY 600V 15A ISOPLUS220
Categorysemiconductor    Discrete semiconductor   
File Size552KB,2 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
Environmental Compliance
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DSEE15-06CC Overview

DIODE ARRAY 600V 15A ISOPLUS220

DSEE15-06CC Parametric

Parameter NameAttribute value
Diode configuration1 pair in series
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)600V
Current - average rectification (Io) (per diode)15A
Voltage at different If - Forward (Vf1.7V @ 15A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)30ns
Current at different Vr - Reverse leakage current100µA @ 600V
Operating Temperature - Junction-55°C ~ 175°C
Installation typeThrough hole
Package/casingISOPLUS220™
Supplier device packagingISOPLUS220™
ADVANCE TECHNICAL INFORMATION
DSEE15-06CC
HiPerDynFRED
TM
Epitaxial Diode
ISOPLUS220
TM
Electrically Isolated Back Surface
I
FAV
= 15 A
V
RRM
= 600 V
t
rr
= 30 ns
V
RRM
V
600
V
RRM
V
300
Type
ISOPLUS 220
E153432
DSEE15-06CC
1
2
3
Symbol
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
T
L
P
tot
V
ISOL
F
C
Weight
Conditions
T
C
= 115°C; rectangular, d = 0.5
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= 2.5 A; L = 180 µH
V
A
= 1.5·V
R
typ.; f = 10 kHz; repetitive
Maximum Ratings
Isolated back surface*
110
0.8
A
mJ
0.2
w
260
-55...+175
175
-55...+150
95
1.6 mm (0.063 in) from case for 10 s
T
C
= 25°C
50/60 Hz RMS; I
ISOL
1 mA
Mounting force
typical
ne
r
0.6
30
2
2500
2
11...65 / 2.5...15 N / lb
g
I
R
V
F
R
thJC
R
thCH
t
rr
I
RM
T
VJ
= 25°C
I
F
= 15 A;
No
V
R
= V
RRM
t
Symbol
Conditions
fo
Characteristic Values
typ.
max.
100
0.5
1.25
1.7
1.6
µA
mA
V
V
K/W
K/W
ns
2.7
A
T
VJ
= 150°C V
R
= V
RRM
T
VJ
= 125°C
T
VJ
= 25°C
I
F
= 1 A; -di/dt = 200 A/µs;
V
R
= 30 V
V
R
= 100 V; I
F
= 25 A; -di
F
/dt = 100 A/µs
T
VJ
= 100°C
Notes: Data given for T
VJ
= 25
O
C and per diode unless otherwise specified
Diodes connected in series
Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse test: pulse Width = 300
µs,
Duty Cycle < 2.0 %
© 2003 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
de
si
A
°C
°C
°C
W
V~
°C
Recommended replacement:
DS98827B(07/03)
DSEE29-06CC
gn
35
15
A
A
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode to tab capacitance (<15pF)
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
See DSEP 15-03A data sheet for
characteristic curves.
20080317a

DSEE15-06CC Related Products

DSEE15-06CC
Description DIODE ARRAY 600V 15A ISOPLUS220
Diode configuration 1 pair in series
Diode type standard
Voltage - DC Reverse (Vr) (Maximum) 600V
Current - average rectification (Io) (per diode) 15A
Voltage at different If - Forward (Vf 1.7V @ 15A
speed Fast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr) 30ns
Current at different Vr - Reverse leakage current 100µA @ 600V
Operating Temperature - Junction -55°C ~ 175°C
Installation type Through hole
Package/casing ISOPLUS220™
Supplier device packaging ISOPLUS220™
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