D a t a S he et , V 3. 0, A ug us t 2 00 8
B G A 7 71 L1 6
High Linearity Dual-Band UMTS LNA
( 1 9 00 / 1 8 0 0 /2 1 0 0 , 8 0 0 / 9 0 0 M H z )
S m a l l S i g n a l D i s c r et e s
Edition 2008-08-26
Published by
Infineon Technologies AG
81726 München, Germany
©
Infineon Technologies AG 2008.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BGA771L16 - Low Power Dual-Band UMTS LNA
BGA771L16
Revision History: 2008-08-26, V3.0
Previous Version: 2008-07-17, V2.1 preliminary
Page
6
8
Subjects (major changes since last revision)
Updated value for thermal resistance
Added supply current characteristics
Data Sheet
3
V3.0, 2008-08-26
BGA771L16 - Low Power Dual-Band UMTS LNA
Table of Contents
Table of Contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
2.9.1
2.9.2
2.10
2.10.1
2.10.2
2.10.3
2.11
2.12
2.13
2.14
2.15
2.16
2.17
2.18
3
3.1
3.2
3.3
3.4
3.5
4
4.1
4.2
Description
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Band Select / Gain Control Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Supply current characteristics;
T
A
= 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Logic Signal Characteristics;
T
A
= 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Measured RF Characteristics Low Band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Measured RF Characteristics UMTS Bands V / VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Measured RF Characteristics UMTS Band VIII . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Measured RF Characteristics Mid Band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Measured RF Characteristics UMTS Band II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Measured RF Characteristics UMTS Bands III / IX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Measured RF Characteristics UMTS Band IV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Measured Performance Low Band (Band V) High Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . 15
Measured Performance Low Band (Band V) High Gain Mode vs. Temperature . . . . . . . . . . . . . . . . 16
Measured Performance Low Band (Band V) Low Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . 17
Measured Performance Low Band (Band V) Low Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . 19
Measured Performance Mid Band (Band II) High Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . 20
Measured Performance Mid Band (Band II) High Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . 21
Measured Performance Mid Band (Band II) Low Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . 22
Measured Performance Mid Band (Band II) Low Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . 24
Application Circuit and Block Diagram
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UMTS bands II and V Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UMTS bands III and VIII Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UMTS bands IV and VIII Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
25
25
26
27
28
29
Physical Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Package Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Data Sheet
4
V3.0, 2008-08-26
BGA771L16 - Low Power Dual-Band UMTS LNA
Description
1
Description
The BGA771L16 is a highly flexible, high linearity dual-band (1900/1800/2100, 800/900 MHz) low noise amplifier
MMIC for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the BGA771L16
uses an advanced biasing concept in order to achieve high linearity.
The device features dynamic gain control, temperature stabilization, standby mode, and 2 kV ESD protection on-
chip as well as matching off chip. Because the matching is off chip, different UMTS bands can be easily applied.
For example, the 1900 MHz path can be converted into a 1800 MHz or a 2100 MHz path by optimizing the input
and output matching network.
Note: UMTS bands II / V is the standard band combination for this product requiring no external output matching
network.
Features
• Gain: 16 / -7.5 dB in high / low gain mode (all bands)
• Noise figure: 1.1 / 1.1 dB in high gain mode
(800 MHz / 1900 MHz)
• Supply current: 3.4 / 0.65 mA in high / low gain mode (all bands)
• Standby mode (< 2
µA
typ.)
• Output internally matched to 50
Ω
• Inputs pre-matched to 50
Ω
• 2kV HBM ESD protection
• Low external component count
• Small leadless TSLP-16-1 package (2.3 x 2.3 x 0.39 mm)
• Pb-free (RoHS compliant) package
TSLP-16-1 package
Figure 1
Type
BGA771L16
Data Sheet
Block diagram of dual-band LNA
Package
TSLP-16-1
Marking
BGA771
5
Chip
T1530
V3.0, 2008-08-26
京公网安备 11010802033920号
EEWORLD
