UNISONIC TECHNOLOGIES CO., LTD
2SD669/A
BIPOLAR POWER GENERAL
PURPOSE TRANSISTOR
1
SOT-223
NPN SILICON TRANSISTOR
1
SOT-89
APPLICATIONS
* Low frequency power amplifier complementary pair with
UTC 2SB649/A
1
TO-92
1
TO-92NL
1
TO-126C
1
TO-126
1
TO-251
1
TO-252
*Pb-free plating product number:
2SD669L/2SD669AL
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SD669-x-AA3-R
2SD669L-x-AA3-R
2SD669-x-AB3-R
2SD669L-x-AB3-R
2SD669-x-T60-K
2SD669L-x-T60-K
2SD669-x-T6C-R
2SD669L-x-T6C-R
2SD669-x-T92-B
2SD669L-x-T92-B
2SD669-x-T92-K
2SD669L-x-T92-K
2SD669-x-T9N-B
2SD669L-x-T9N-B
2SD669-x-T9N-K
2SD669L-x-T9N-K
2SD669-x-T9N-R
2SD669L-x-T9N-R
2SD669-x-TM3-T
2SD669L-x-TM3-T
2SD669-x-TN3-R
2SD669L-x-TN3-R
2SD669-x-TN3-T
2SD669L-x-TN3-T
Package
SOT-223
SOT-89
TO-126
TO-126C
TO-92
TO-92
TO-92NL
TO-92NL
TO-92NL
TO-251
TO-252
TO-252
Pin Assignment
1
2
3
B
C
E
B
C
E
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
B
C
E
B
C
E
Packing
Tape Reel
Tape Reel
Bulk
Bulk
Tape Box
Bulk
Tape Box
Bulk
Tape Reel
Tube
Tape Reel
Tube
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Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 5
QW-R204-005,E
2SD669/A
ORDERING INFORMATION(Cont.)
Order Number
Normal
Lead Free Plating
2SD669A-x-AA3-R
2SD669AL-x-AA3-R
2SD669A-x-AB3-R
2SD669AL-x-AB3-R
2SD669A-x-T60-K
2SD669AL-x-T60-K
2SD669A-x-T6C-R
2SD669AL-x-T6C-R
2SD669A-x-T92-B
2SD669AL-x-T92-B
2SD669A-x-T92-K
2SD669AL-x-T92-K
2SD669A-x-T9N-B
2SD669AL-x-T9N-B
2SD669A-x-T9N-K
2SD669AL-x-T9N-K
2SD669A-x-T9N-R
2SD669AL-x-T9N-R
2SD669A-x-TM3-T
2SD669AL-x-TM3-T
2SD669A-x-TN3-R
2SD669AL-x-TN3-R
2SD669A-x-TN3-T
2SD669AL-x-TN3-T
Package
SOT-223
SOT-89
TO-126
TO-126C
TO-92
TO-92
TO-92NL
TO-92NL
TO-92NL
TO-251
TO-252
TO-252
NPN SILICON TRANSISTOR
Pin Assignment
1
2
3
B
C
E
B
C
E
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
B
C
E
B
C
E
Packing
Tape Reel
Tape Reel
Bulk
Bulk
Tape Box
Bulk
Tape Box
Bulk
Tape Reel
Tube
Tape Reel
Tube
2SD669L-x-AB3-R
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Plating
(1) K: Bulk, R: Tape Reel, T: Tube
(2) AA3: SOT-223, AB3: SOT-89, T60: TO-126,
T 6C: TO-126C, TM3: TO-251, TN3: TO-252,
T 92:TO-92, T9N: TO-92NL
(3) x: refer to Classification of h
FE1
(4) L: Lead Free Plating, Blank: Pb/Sn
UNISONIC TECHNOLOGIES CO., LTD
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2 of 5
QW-R204-005,E
2SD669/A
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Peak Current
Collector Power Dissipation
Collector Power Dissipation
2SD669
2SD669A
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
l
C(PEAK)
SOT-223
TO-126
P
D
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(
Ta=
25
℃
,
unless otherwise specified)
RATINGS
180
120
160
5
1.5
3
0.5
1
UNIT
V
V
V
A
A
W
W
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-40 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25
℃
, unless otherwise specified)
PARAMETER
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown 2SD669
Voltage
2SD669A
Emitter to Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain Bandwidth Product
Output Capacitance
Note: Pulse test.
SYMBOL
TEST CONDITIONS
BV
CBO
I
C
=1mA, I
E
=0
BV
CEO
BV
EBO
I
CBO
h
FE1
h
FE2
V
CE(SAT)
V
BE
f
T
C
ob
I
C
=10mA, R
BE
=
∞
I
E
=1mA, I
C
=0
V
CB
=160V, I
E
=0
V
CE
=5V, I
C
=150mA (Note)
V
CE
=5V, I
C
=500mA (Note)
I
C
=600mA, I
B
=50mA (Note)
V
CE
=5V, I
C
=150mA (Note)
V
CE
=5V, I
C
=150mA (Note)
V
CB
=10V, I
E
=0, f=1MHz
MIN
180
120
160
5
60
30
TYP
MAX
UNIT
V
V
V
µ
A
10
320
1
1.5
140
14
V
V
MHz
pF
CLASSIFICATION OF h
FE1
RANK
RANGE
B
60-120
C
100-200
D
160-320
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QW-R204-005,E
2SD669/A
TYPICAL CHARACTERISTICS
DC Current Transfer Ratio
vs. Collector Current
300
5
℃
Ta=7
NPN SILICON TRANSISTOR
Collector to Emitter Saturation Voltage
vs. Collector Current
1.2
I
C
=10 I
B
DC Current Transfer Ratio, h
FE
250
200
150
100
50
1
1
3
10
30
100 300 1,000 3,000
Collector Current, I
C
(mA)
V
CE
=5V
25
-20
Collector to emitter saturation
voltage, V
CE(SAT)
(V)
1.0
0.8
0.6
0.4
0.2
0
1
3
10
30
100
300
1,000
Collector Current, I
C
(mA)
T
5
=7
C
1.2
Base to Emitter Saturation
Voltage, V
BE(SAT)
(V)
Base to Emitter Saturation Voltage
vs. Collector Current
I
C
=10I
B
20
℃
T
C
=-
25
75
240
Gain Bandwidth Product, f
T
(MHz)
Gain Bandwidth Product
vs. Collector Current
V
CE
=5V
Ta=25℃
1.0
0.8
0.6
0.4
0.2
0
200
160
120
80
40
0
10
1
3
10
30
100 300 1,000
Collector Current, I
C
(mA)
30
100
300
1,000
Collector Current, I
C
(mA)
Collector Output Capacitance
vs. Collector to Base Voltage
Area of Safe Operation
Collector Output Capacitance, C
ob
(pF)
200
Collector Current, I
C
(A)
100
50
20
10
5
2
1
f=1MHz
I
E
=0
3
(13.3V, 1.5A)
1.0
40V, 0.5A
0.3
0.1
0.03
0.01
1
DC Operation (T
C
=25℃)
(120V, 0.04A)
(160V, 0.02A)
2SD669
2SD669A
2
5
10
20
50
100
3
10
30
100
Collector to Base Voltage, V
CB
(V)
Collector to Emitter Voltage, V
CE
(V)
4 of 5
QW-R204-005,E
UNISONIC TECHNOLOGIES CO., LTD
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25
-2 0
℃
300
2SD669/A
TYPICAL CHARACTERISTICS(Cont.)
Typical Transfer Characteristics
500
Collector Current, I
C
(mA)
NPN SILICON TRANSISTOR
200
100
V
CE
=5V
20
10
5
2
1
0
Ta=
7 5
℃
50
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage, V
BE
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
25
-20
5 of 5
QW-R204-005,E
Embedded System
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