UNISONIC TECHNOLOGIES CO., LTD
2SD313
NPN EPITAXIAL PLANAR
TRANSISTOR
DESCRIPTION
The UTC 2SD313 is designed for use in general purpose
amplifier and switching applications.
NPN SILICON TRANSISTOR
1
TO-220
*Pb-free plating product number:2SD313L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SD313-x-TA3-T
2SD313L-x-TA3-T
Package
TO-220
Pin Assignment
1
2
3
B
C
E
Packing
Tube
2SD313L-x-TA3-T
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Plating
(1) T: Tube
(2) TA3: TO-220
(3) x: refer to Classification of h
FE
(4) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd
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2SD313
ABSOLUTE MAXIMUM RATINGS
NPN SILICON TRANSISTOR
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
60
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
3
A
Junction Temperature
T
J
+150
°
C
Storage Temperature
T
STG
-55 ~ +150
°
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25
°
C)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
Base-Emitter On voltage
DC Current Gain
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
V
BE(ON)
h
FE
TEST CONDITIONS
I
C
=1mA
I
C
=10mA
I
E
=100uA
V
CB
=20V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=2A, I
B
=0.2A
V
CE
=2V, I
C
=1A
I
C
=1A, V
CE
=2V
I
C
=0.1A,V
CE
=2V
MIN
60
60
5
TYP
MAX
UNIT
V
V
V
mA
mA
V
V
40
40
0.1
1.0
1.0
1.5
320
CLASSIFICATION ON h
FE
RANK
RANGE
C
40-80
D
60-120
E
100-200
F
160-320
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
DC Current Gain
Saturation Voltage, V
CE(SAT)
(mV)
NPN SILICON TRANSISTOR
Saturation Voltage vs. Collector Current
10000
I
C
=10I
B
1000
100
h
FE
1000
10
100
1
10
100
1000
10000
Collector Current (mA)
10
10
100
1000
10000
Collector Current (mA)
V
BE(SAT)
vs. I
C
10000
I
C
=10I
B
10
SOA
1000
Collector Current (A)
10
100
1000
10000
V
BE(SAT)
(mA)
1
100
Collector Current (mA)
0.1
1
10
Collector to Emitter Voltage (V)
100
V
BE(ON)
vs. I
C
10000
V
CE
=2V
V
BE(ON)
(mV)
1000
100
10
100
1000
10000
Collector Current (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SD313
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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