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SS36L MTG

Description
DIODE SCHOTTKY 60V 3A SUB SMA
Categorysemiconductor    Discrete semiconductor   
File Size197KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

SS36L MTG Overview

DIODE SCHOTTKY 60V 3A SUB SMA

SS36L MTG Parametric

Parameter NameAttribute value
Diode typeSchottky
Voltage - DC Reverse (Vr) (Maximum)60V
Current - average rectification (Io)3A
Voltage at different If - Forward (Vf750mV @ 3A
speedFast recovery = < 500 ns, > 200mA (Io)
Current at different Vr - Reverse leakage current500µA @ 60V
Capacitance at different Vr, F-
Installation typesurface mount
Package/casingDO-219AB
Supplier device packagingSub SMA
Operating Temperature - Junction-55°C ~ 150°C
SS34L thru SS310L
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low power loss, high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Surface Mount Schottky Barrier Rectifier
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, DC/DC converters,
and polarity protection applications
Sub SMA
MECHANICAL DATA
Case:
Sub SMA
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - Green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.019 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
I
F
= 3 A
Maximum reverse current @ rated VR
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
T
J
=25
T
J
=125
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
dV/dt
R
θJC
R
θJA
T
J
T
STG
- 55 to +125
0.5
0.5
60
10
10000
30
60
- 55 to +150
- 55 to +150
SYMBOL
SS34L
34L
40
28
40
SS36L
36L
60
42
60
3
80
0.75
0.85
0.1
5
SS310L
310L
100
70
100
V
V
V
A
A
V
mA
V/μs
O
UNIT
C/W
O
O
C
C
Document Number: DS_D1405056
Version: B14

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