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2N5550_07

Description
600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Categorysemiconductor    Discrete semiconductor   
File Size86KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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2N5550_07 Overview

600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

2N5550_07 Parametric

Parameter NameAttribute value
Maximum collector current0.6000 A
Maximum Collector-Emitter Voltage160 V
Number of terminals3
Processing package descriptionLEAD FREE, CASE 29-11, TO-226AA, 3 PIN
each_compliYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateActive
structureSINGLE
Minimum DC amplification factor30
jedec_95_codeTO-92
jesd_30_codeO-PBCY-T3
jesd_609_codee1
moisture_sensitivity_levelNOT SPECIFIED
Number of components1
Maximum operating temperature150 Cel
Packaging MaterialsPLASTIC/EPOXY
packaging shapeROUND
Package SizeCYLINDRICAL
eak_reflow_temperature__cel_260
larity_channel_typeNPN
wer_dissipation_max__abs_0.3500 W
qualification_statusCOMMERCIAL
sub_categoryOther Transistors
surface mountNO
terminal coatingTIN SILVER COPPER
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
ime_peak_reflow_temperature_max__s_40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Rated crossover frequency100 MHz
2N5550, 2N5551
Preferred Device
Amplifier Transistors
NPN Silicon
Features
These are Pb−Free Devices*
http://onsemi.com
COLLECTOR
3
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
2N5550
2N5551
Collector − Base Voltage
2N5550
2N5551
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
P
D
P
D
T
J
, T
stg
V
CBO
160
180
6.0
600
625
5.0
1.5
12
−55 to +150
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
TO−92
CASE 29
STYLE 1
12
1
Symbol
V
CEO
140
160
Vdc
Value
Unit
Vdc
1
EMITTER
2
BASE
3
STRAIGHT LEAD
BULK PACK
3
BENT LEAD
TAPE & REEL
AMMO PACK
2
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
2N
555x
AYWW
G
G
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
x
= 0 or 1
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
1
March, 2007 − Rev. 5
Publication Order Number:
2N5550/D

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2N5550_07 2N55551ZL1G
Description 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Number of terminals 3 3
Number of components 1 1
Maximum operating temperature 150 Cel 150 °C
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
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