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25C160T-I/P

Description
2K X 8 SPI BUS SERIAL EEPROM, PDSO8
Categorystorage   
File Size306KB,22 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Download Datasheet Parametric View All

25C160T-I/P Overview

2K X 8 SPI BUS SERIAL EEPROM, PDSO8

25C160T-I/P Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals8
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum supply/operating voltage5.5 V
Minimum supply/operating voltage2.5 V
Rated supply voltage5 V
maximum clock frequency2 MHz
Processing package description0.150 INCH, Plastic, MS-012, SOIC-8
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
CraftsmanshipCMOS
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal spacing1.27 mm
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
Temperature levelINDUSTRIAL
memory width8
organize2K × 8
storage density16384 deg
operating modeSynchronize
Number of digits2048 words
Number of digits2K
Memory IC typebus serial electrically erasable read-only memory
serial parallelserial
Maximum TWC of write cycle5 ms
Not recommended for new designs –
Please use 25AA160A/B or 25LC160A/B.
25AA160/25LC160/25C160
16K SPI Bus Serial EEPROM
Device Selection Table
Part
Number
25AA160
25LC160
25C160
V
CC
Range
1.8-5.5V
2.5-5.5V
4.5-5.5V
Max Clock
Frequency
1 MHz
2 MHz
3 MHz
Temp
Ranges
I
I
I,E
Description:
The Microchip Technology Inc. 25AA160/25LC160/
25C160 (25XX160
*
) are 16 Kbit Serial Electrically
Erasable PROMs. The memory is accessed via a
simple Serial Peripheral Interface (SPI) compatible
serial bus. The bus signals required are a clock input
(SCK) plus separate data in (SI) and data out (SO)
lines. Access to the device is controlled through a Chip
Select (CS) input.
Communication to the device can be paused via the
hold pin (HOLD). While the device is paused, transi-
tions on its inputs will be ignored, with the exception of
chip select, allowing the host to service higher priority
interrupts.
Features:
• Low-power CMOS technology:
- Write current: 3 mA maximum
- Read current: 500
A
typical
- Standby current: 500 nA typical
• 2048 x 8-bit organization
• 16 byte page
• Write cycle time: 5 ms max.
• Self-timed erase and write cycles
• Block write protection:
- Protect none, 1/4, 1/2 or all of array
• Built-in write protection:
- Power on/off data protection circuitry
- Write enable latch
- Write-protect pin
• Sequential read
• High reliability:
- Endurance: 1 M cycles
- Data retention: > 200 years
- ESD protection: > 4000V
• 8-pin PDIP and SOIC packages
• Temperature ranges supported:
- Industrial (I):
- Automotive (E) (25C160):
-40C to +85C
-40°C to +125°C
Package Types
PDIP/SOIC
CS
SO
WP
V
SS
1
25XX160
2
3
4
8
7
6
5
V
CC
HOLD
SCK
SI
Block Diagram
Status
Register
HV Generator
I/O Control
Logic
Memory
Control
Logic
X
Dec
EEPROM
Array
Page Latches
SI
SO
CS
SCK
HOLD
WP
V
CC
V
SS
Y Decoder
Sense Amp.
R/W Control
1997-2012 Microchip Technology Inc.
DS21231E-page 1

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