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1Z11A

Description
200 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size211KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

1Z11A Overview

200 W, UNIDIRECTIONAL, SILICON, TVS DIODE

1Z11A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
Maximum dynamic impedance30 Ω
JEDEC-95 codeDO-15
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak reverse power dissipation200 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1 W
Certification statusNot Qualified
Nominal reference voltage11 V
Maximum reverse current10 µA
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5%
Working test current10 mA
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