PMCM650CUNE
WL
CS
P6
20 V, Common Drain N-channel Trench MOSFET
Rev. 1.0 — 8 November 2017
Product data sheet
1
Product profile
1.1 General description
N-channel enhancement mode common-drain dual Field-Effect Transistor (FET) in a 6
bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
1.2 Features and benefits
•
•
•
•
•
Common-drain type for bi-directional current flow
Low threshold voltage
Ultra small package: 0.98 × 1.48 × 0.35 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
1.3 Applications
•
Loadswitch
•
Battery Protection
•
Battery Management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
V
SS
V
GS
I
S
R
SSon
[1]
Parameter
source-source voltage
gate-source voltage
source current
source-source on-state
resistance
Conditions
T
j
= 25 °C
T
amb
= 25 °C; V
GS
= 4.5 V; t ≤ 5 s
V
GS
= 4.5 V; I
S
= 3 A; T
j
= 25 °C
[1]
Min
-
-8
-
-
Typ
-
-
-
40
2
Max
20
8
5.3
52
Unit
V
V
A
mΩ
Static characteristics
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm .
Nexperia
20 V, Common Drain N-channel Trench MOSFET
PMCM650CUNE
2
Pin
A1
A2
B1
B2
C1
C2
Pinning information
Symbol
G1
S1
S2
S1
S2
G2
Table 2. Pinning
Description
gate 1
source 1
source 2
source 1
source 2
gate 2
Simplified outline
1
A
B
C
2
Graphic symbol
S1
S2
G1
Transparent top view
G2
aaa-027241
3
Ordering information
Package
Name
Description
wafer level chip-size package; 6 bumps (3 x 2)
Table 3. Ordering information
Type number
PMCM650CUNE
Version
WLCSP6_3-2
WLCSP6
4
Marking
Marking code
AH
Table 4. Marking codes
Type number
PMCM650CUNE
PMCM650CUNE v.1
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1.0 — 8 November 2017
2 / 18
Nexperia
20 V, Common Drain N-channel Trench MOSFET
PMCM650CUNE
5
Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
SS
V
GS
I
S
Parameter
source-source voltage
gate-source voltage
source current
Conditions
T
j
= 25 °C
T
j
= 25 °C
T
amb
= 25 °C; V
GS
= 4.5 V; t ≤ 5 s
T
amb
= 25 °C; V
GS
= 4.5 V
T
amb
= 100 °C; V
GS
= 4.5 V
[1]
[1]
[1]
Min
-
−8
-
-
-
-
[2]
[1]
Max
20
8
5.3
4.1
2.6
16
556
1300
12500
150
150
150
1.2
Unit
V
V
A
A
A
A
mW
mW
mW
°C
°C
°C
A
I
SM
P
tot
peak source current
total power dissipation
T
amb
= 25 °C; single pulse;
t
p
≤ 10 μs
T
amb
= 25 °C
T
amb
= 25 °C
T
sp
= 25 °C
-
-
-
−55
−55
−65
T
j
T
amb
T
stg
I
FS
[1]
[2]
junction temperature
ambient temperature
storage temperature
source-forward current
T
amb
= 25 °C
[1]
Source-Forward diode
-
2
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm .
Device mounted on an FR4 PCB, single-sided copper; tin-plated and standard footprint.
PMCM650CUNE v.1
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1.0 — 8 November 2017
3 / 18
Nexperia
20 V, Common Drain N-channel Trench MOSFET
PMCM650CUNE
017aaa124
120
P
der
(%)
80
017aaa123
120
I
der
(%)
80
40
40
0
- 75
- 25
25
75
125
T
j
(°C)
175
0
- 75
- 25
25
75
125
T
j
(°C)
175
Figure 1. Normalized total power dissipation as a
function of junction temperature
10
2
I
S
(A)
10
Figure 2. Normalized continuous source-source current
as a function of junction temperature
aaa-02754
Limit R
SSon
= V
SS
/I
S
t
p
= 10 µs
100 µs
1 ms
DC; T
sp
= 25 °C
10 ms
1
10
-1
DC; T
amb
= 25 °C; 6 cm
2
100 ms
10
-2
10
-1
1
10
V
SS
(V)
10
2
Figure 3. Safe operating area; junction to ambient; continuous and peak source currents as a function of source-
source voltage
PMCM650CUNE v.1
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1.0 — 8 November 2017
4 / 18
Nexperia
20 V, Common Drain N-channel Trench MOSFET
PMCM650CUNE
6
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
Table 6. Thermal characteristics
Symbol
R
th(j-a)
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
-
-
Typ
180
65
75
45
5
Max
225
85
95
55
10
Unit
K/W
K/W
K/W
K/W
K/W
in free air; t ≤ 5 s
R
th(j-sp)
[1]
[2]
[3]
[3]
thermal resistance from junction
to solder point
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain, 4 layer, 1 cm .
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm .
10
3
Z
th(j-a)
(K/W)
10
2
aaa-027259
duty cycle = 1
0.75
0.5
0.25
0.1
0.33
0.2
0.05
0.01
10
0.02
0
1
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Figure 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMCM650CUNE v.1
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1.0 — 8 November 2017
5 / 18
京公网安备 11010802033920号
EEWORLD
