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24LC65T-/P

Description
8K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
Categorystorage   
File Size344KB,24 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Download Datasheet Parametric View All

24LC65T-/P Overview

8K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8

24LC65T-/P Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals8
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum supply/operating voltage6 V
Minimum supply/operating voltage2.5 V
Rated supply voltage5 V
maximum clock frequency0.1000 MHz
Processing package description5.28 MM, ROHS COMPLIANT, PLASTIC, SOIJ-8
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
CraftsmanshipCMOS
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal spacing1.27 mm
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
Temperature levelINDUSTRIAL
memory width8
organize8K X 8
storage density65536 deg
operating modeSYNCHRONOUS
Number of digits8192 words
Number of digits8K
Memory IC typeI2C/2-WIRE SERIAL EEPROM
serial parallelSERIAL
Maximum TWC of write cycle5 ms
24AA65/24LC65/24C65
64K I
2
C
Smart Serial
EEPROM
Device Selection Table
Part Number
24AA65
24LC65
24C65
V
CC
Range
1.8-6.0V
2.5-6.0V
4.5-6.0V
Page Size
64 Bytes
64 Bytes
64 Bytes
Temp. Ranges
C
C, I
C, I, E
Packages
P, SM
P, SM
P, SM
Features:
• Voltage Operating Range: 1.8V to 6.0V
- Peak write current 3 mA at 6.0V
- Maximum read current 150
μA
at 6.0V
- Standby current 1
μA,
typical
• Industry Standard Two-Wire Bus Protocol I
2
C™
Compatible
• 8-Byte Page, or Byte modes Available
• 2 ms Typical Write Cycle Time, Byte or Page
• 64-Byte Input Cache for Fast Write Loads
• Up to 8 devices may be connected to the same
bus for up to 512K bits total memory
• Including 100 kHz (1.8V
Vcc
<
4.5V) and 400
kHz (4.5V
V
CC
6.0V) Compatibility
• Programmable Block Security Options
• Programmable Endurance Options
• Schmitt Trigger, Filtered Inputs for Noise
Suppression
• Output Slope Control to Eliminate Ground Bounce
• Self-Timed Erase and Write Cycles
• Power-on/off Data Protection Circuitry
• Endurance:
- 10,000,000 E/W cycles for a High Endurance
Block
- 1,000,000 E/W cycles for a Standard
Endurance Block
• Electrostatic Discharge Protection > 4000V
• Data Retention > 200 years
• 8-pin PDIP/SOIJ Packages
• Temperature Ranges
- Industrial (I)
-40°C to +85°C
- Automotive (E)
-40°C to +125°C
• Pb-Free and RoHS Compliant
Description:
The Microchip Technology Inc. 24AA65/24LC65/
24C65 (24XX65)* is a “smart” 8K x 8 Serial Electrically
Erasable PROM. This device has been developed for
advanced, low-power applications such as personal
communications, and provides the systems designer
with flexibility through the use of many new user-pro-
grammable features. The 24XX65 offers a relocatable
4K bit block of ultra-high-endurance memory for data
that changes frequently. The remainder of the array, or
60K bits, is rated at 1,000,000 erase/write (E/W) cycles
ensured. The 24XX65 features an input cache for fast
write loads with a capacity of eight pages, or 64 bytes.
This device also features programmable security
options for E/W protection of critical data and/or code
of up to fifteen 4K blocks. Functional address lines
allow the connection of up to eight 24XX65’s on the
same bus for up to 512K bits contiguous EEPROM
memory. Advanced CMOS technology makes this
device ideal for low-power nonvolatile code and data
applications. The 24XX65 is available in the standard
8-pin plastic DIP and 8-pin surface mount SOIJ
package.
Package Types
PDIP
A0
A1
A2
V
SS
1
8
V
CC
NC
SCL
SDA
3
4
24XX65
2
7
6
5
SOIJ
A0
A1
A2
1
8
V
CC
NC
SCL
SDA
2
3
4
7
6
5
*24XX65 is used in this document as a generic part
number for the 24AA65/24LC65/24C65 devices.
V
SS
©
2008 Microchip Technology Inc.
24XX65
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