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IRFR120ATM

Description
MOSFET N-CH 100V 8.4A DPAK
Categorysemiconductor    Discrete semiconductor   
File Size254KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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IRFR120ATM Overview

MOSFET N-CH 100V 8.4A DPAK

IRFR120ATM Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)100V
Current - Continuous Drain (Id) at 25°C8.4A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs200 milliohms @ 4.2A, 10V
Vgs (th) (maximum value) when different Id4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)22nC @ 10V
Vgs (maximum value)-
Input capacitance (Ciss) at different Vds (maximum value)480pF @ 25V
FET function-
Power dissipation (maximum)2.5W(Ta),32W(Tc)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Supplier device packagingTO-252AA
Package/casingTO-252-3, DPak (2 leads + tab), SC-63
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10
µ
A (Max.) @ V
DS
= 100V
Lower R
DS(ON)
: 0.155
(Typ.)
IRFR/U120A
BV
DSS
= 100 V
R
DS(on)
= 0.2
I
D
= 8.4 A
D-PAK
2
1
3
1
I-PAK
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
C
)
Continuous Drain Current (T
C
=100
C
)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25
C
) *
Ο
Ο
Ο
Value
100
8.4
5.3
1
O
2
O
1
O
1
O
3
O
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/
C
Ο
34
+
20
_
141
8.4
3.2
6.5
2.5
32
0.26
- 55 to +150
Total Power Dissipation (T
C
=25
C
)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
Ο
T
J
, T
STG
T
L
Ο
C
300
Thermal Resistance
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
Characteristic
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
Typ.
--
--
--
Max.
3.9
50
110
Ο
Units
C
/W
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. B
©1999 Fairchild Semiconductor Corporation

IRFR120ATM Related Products

IRFR120ATM IRFU120ATU
Description MOSFET N-CH 100V 8.4A DPAK MOSFET N-CH 100V 8.4A IPAK
FET type N channel N channel
technology MOSFET (metal oxide) MOSFET (metal oxide)
Drain-source voltage (Vdss) 100V 100V
Current - Continuous Drain (Id) at 25°C 8.4A(Tc) 8.4A(Tc)
Drive voltage (maximum Rds On, minimum Rds On) 10V 10V
Rds On (maximum value) when different Id, Vgs 200 milliohms @ 4.2A, 10V 200 milliohms @ 4.2A, 10V
Vgs (th) (maximum value) when different Id 4V @ 250µA 4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 22nC @ 10V 22nC @ 10V
Input capacitance (Ciss) at different Vds (maximum value) 480pF @ 25V 480pF @ 25V
Power dissipation (maximum) 2.5W(Ta),32W(Tc) 2.5W(Ta),32W(Tc)
Operating temperature -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ)
Installation type surface mount Through hole
Supplier device packaging TO-252AA I-PAK
Package/casing TO-252-3, DPak (2 leads + tab), SC-63 TO-251-3 short lead, IPak, TO-251AA
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