DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
M3D034
PZ1418B30U
NPN microwave power transistor
Product specification
Supersedes data of 1997 Feb 19
1997 Nov 13
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES
•
Interdigitated structure provides high emitter efficiency
•
Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
•
Gold metallization realizes very stable characteristics
and excellent lifetime
•
Multicell geometry gives good balance of dissipated
power and low thermal resistance
•
Internal input and output prematching ensures good
stability and easy broadband use.
APPLICATIONS
•
Common base class-B broadband amplifiers under CW
conditions in military and professional applications.
2
3
handbook, halfpage
PZ1418B30U
PINNING - SOT443A
PIN
1
2
3
collector
emitter
base; connected to flange
DESCRIPTION
1
c
b
e
DESCRIPTION
Top view
MAM314
NPN silicon planar epitaxial microwave power transistor in
a SOT443A metal ceramic flange package with the base
connected to the flange.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance up to T
mb
= 25
°C
in a common base class-B wideband amplifier.
f
(GHz)
1.4 to 1.8
V
CC
(V)
28
P
L
(W)
≥27
G
p
(dB)
≥7.3
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
η
C
(%)
≥38
Z
i
; Z
L
(Ω)
see Figs 6 and 7
1997 Nov 13
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
soldering temperature
T
mb
≤
75
°C
CONDITIONS
open emitter
open base
R
BE
= 0
open collector
−
−
−
−
−
−
−65
−
−
MIN.
PZ1418B30U
MAX.
40
15
35
3
4
45
+200
200
235
V
V
V
V
A
W
UNIT
°C
°C
°C
handbook,
50
MGD970
Ptot
(W)
40
30
20
10
0
0
50
100
150
200
Tmb (°C)
Fig.2
Power derating curve as a function of
mounting base temperature.
1997 Nov 13
3
Philips Semiconductors
Product specification
NPN microwave power transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th mb-h
Note
1. See “Mounting
recommendations in the General part of handbook SC19a”.
CHARACTERISTICS
T
mb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CES
I
EBO
PARAMETER
collector cut-off current
collector cut-off current
emitter cut-off current
CONDITIONS
V
CB
= 40 V; I
E
= 0
V
CB
= 30 V; I
E
= 0
V
CE
= 35 V; R
BE
= 0
V
EB
= 1.5 V; I
C
= 0
PARAMETER
thermal resistance from junction to mounting-base
thermal resistance from mounting-base to heatsink
CONDITIONS
T
j
= 75
°C
T
j
= 75
°C;
note 1
PZ1418B30U
MAX.
2.2
0.2
UNIT
K/W
K/W
MAX.
10
5
50
200
UNIT
mA
mA
mA
µA
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
°C
in a common base class B wideband amplifier.
f
(GHz)
1.4 to 1.8
V
CC
(V)
28
P
L
(W)
≥27
typ. 35
G
p
(dB)
≥7.3
typ. 8.4
η
C
(%)
≥38
typ. 45
Z
i
; Z
L
(Ω)
see Figs 6 and 7
handbook, full pagewidth
input
50
Ω
,,,,,
,,,,, ,,,,,
,,
,,,,, ,,,,,
,,,,, ,,,,,
,,,,,
2
4
5
5
2
5.5
2
12
21
4
0.65
0.65
6.5
100 pF
(ATC)
8.5
output
50
Ω
MGK064
Dimensions in mm.
Substrate: Epsilam printed-circuit board.
Thickness: 0.635 mm.
Permittivity:
ε
r
= 10.
Fig.3 Wideband test circuit board for 1.4 to 1.8 GHz operation.
1997 Nov 13
4
Philips Semiconductors
Product specification
NPN microwave power transistor
PZ1418B30U
handbook, halfpage
(1)
(2)
(3)
40
MGD984
handbook, halfpage
40
MGL066
PL
(W)
PL
(W)
30
PL
η
C
(%)
20
η
C
50
40
VSWR
0
0
2
4
Pi (W)
6
1.4
1.5
1.6
1.7
VSWR
2
1
1.8
1.9
f (GHz)
Class-B operation; V
CC
= 28 V; T
mb
= 25
°C.
(1) 1.4 GHz.
(2) 1.6 GHz.
(3) 1.8 GHz.
Class-B operation; V
CC
= 28 V; T
mb
= 25
°C;
P
i
= 5 W.
Fig.4
Load power as a function of input power;
typical values.
Fig.5
Load power, efficiency and VSWR as
functions of frequency; typical values.
1997 Nov 13
5
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