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MTZJT-774.7B

Description
DIODE ZENER 4.7V 500MW MSD
CategoryDiscrete semiconductor    diode   
File Size49KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

MTZJT-774.7B Overview

DIODE ZENER 4.7V 500MW MSD

MTZJT-774.7B Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance80 Ω
JEDEC-95 codeDO-34
JESD-30 codeO-LALF-W2
JESD-609 codee3/e2
Maximum knee impedance900 Ω
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage4.7 V
Maximum reverse current5 µA
surface mountNO
technologyZENER
Terminal surfaceTIN/TIN COPPER
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperature10
Maximum voltage tolerance2.6%
Working test current5 mA
Base Number Matches1
MTZ J Series
Diodes
Zener diode
MTZ J Series
Applications
Constant voltage control
External dimensions
(Unit : mm)
CATHODE BAND (BLACK)
Features
1) Glass sealed envelope. (MSD)
2) High reliability.
29.0±1.0
2.7±0.3
29.0±1.0
φ
0.4±0.1
φ
1.8±0.2
Construction
Silicon epitaxial planer
ROHM : MSD
EIAJ :
JEDEC : DO-34
The Zener voltage value is stamped
on the body as a digital marking.
Absolute maximum ratings
(Ta=25°C)
Parameter
Power dissipation
Junction temperature
Storage temperature
Symbol
P
Tj
Tstg
Limits
500
175
−65
to
+175
Unit
mW
°C
°C
1/3
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