NTD32N06-001 datasheet, PDF - EEWORLD Datasheet

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NTD32N06-001: DescriptionMOSFET N-CH 60V 32A IPAK; Categorysemiconductor Discrete semiconductor; File Size68KB，8 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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NTD32N06-001 Overview

MOSFET N-CH 60V 32A IPAK

NTD32N06-001 Parametric

Parameter Name	Attribute value
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	60V
Current - Continuous Drain (Id) at 25°C	32A（Ta）
Drive voltage (maximum Rds On, minimum Rds On)	10V
Rds On (maximum value) when different Id, Vgs	26 milliohms @ 16A, 10V
Vgs (th) (maximum value) when different Id	4V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)	60nC @ 10V
Vgs (maximum value)	±20V
Input capacitance (Ciss) at different Vds (maximum value)	1725pF @ 25V
FET function	-
Power dissipation (maximum)	1.5W（Ta），93.75W（Tj）
Operating temperature	-55°C ~ 175°C（TJ）
Installation type	Through hole
Supplier device packaging	I-PAK
Package/casing	TO-251-3 short lead, IPak, TO-251AA

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NTD32N06

Power MOSFET

32 Amps, 60 Volts, N−Channel DPAK

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

Features

http://onsemi.com

(BR)DSS

60 V

DS(on)

TYP

26 mW

N−Channel

MAX

32 A

•

Pb−Free Packages are Available

Smaller Package than MTB36N06V

Lower R

DS(on)

Lower V

DS(on)

Lower Total Gate Charge

Lower and Tighter V

Lower Diode Reverse Recovery Time

Lower Reverse Recovery Stored Charge

Power Supplies

Converters

Power Motor Controls

Bridge Circuits

Typical Applications

MAXIMUM RATINGS

= 25°C unless otherwise noted)

Rating

Drain−to−Source Voltage

Drain−to−Gate Voltage (R

= 10 MW)

Gate−to−Source Voltage, Continuous

− Non−Repetitive (t

v10

ms)

Drain Current

− Continuous @ T

= 25°C

− Continuous @ T

= 100°C

− Single Pulse (t

v10

ms)

Total Power Dissipation @ T

= 25°C

Derate above 25°C

Total Power Dissipation @ T

= 25°C (Note 1)

Total Power Dissipation @ T

= 25°C (Note 2)

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche

Energy − Starting T

= 25°C (Note 3)

= 50 Vdc, V

= 10 Vdc, L = 1.0 mH,

L(pk)

= 25 A, V

= 60 Vdc, R

= 25

Thermal Resistance − Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

Symbol

DSS

DGR

Value

"20

"30

93.75

0.625

2.88

1.5

−55 to

+175

313

Unit

Vdc

1 2

Adc

Apk

W/°C

°C

qJC

qJA

1.6

100

260

°C/W

DPAK

CASE 369C

STYLE 2

MARKING

DIAGRAMS

Drain

AYWW

32N06

Drain

Gate

Source

Drain

AYWW

32N06

1 2 3

Gate Drain Source

32N06

= Device Code

= Assembly Location

= Year

= Work Week

DPAK−3

CASE 369D

STYLE 2

, T

stg

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

1. When surface mounted to an FR4 board using 1″ pad size,

(Cu Area 1.127 in

2. When surface mounted to an FR4 board using minimum recommended pad

size, (Cu Area 0.412 in

3. Repetitive rating; pulse width limited by maximum junction temperature.

Semiconductor Components Industries, LLC, 2004

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

August, 2004 − Rev. 3

Publication Order Number:

NTD32N06/D

NTD32N06-001 Related Products

	NTD32N06-001	NTD32N06-1
Description	MOSFET N-CH 60V 32A IPAK	32 Amps, 60 Volts, N−Channel DPAK

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