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NTD32N06-1

Description
32 Amps, 60 Volts, N−Channel DPAK
CategoryDiscrete semiconductor    The transistor   
File Size68KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

NTD32N06-1 Overview

32 Amps, 60 Volts, N−Channel DPAK

NTD32N06-1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionCASE 369D-01, DPAK-3
Contacts3
Manufacturer packaging codeCASE 369D-01
Reach Compliance Code_compli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)313 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)32 A
Maximum drain current (ID)32 A
Maximum drain-source on-resistance0.026 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)93.75 W
Maximum pulsed drain current (IDM)90 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
NTD32N06
Power MOSFET
32 Amps, 60 Volts, N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
http://onsemi.com
V
(BR)DSS
60 V
R
DS(on)
TYP
26 mW
N−Channel
D
I
D
MAX
32 A
Pb−Free Packages are Available
Smaller Package than MTB36N06V
Lower R
DS(on)
Lower V
DS(on)
Lower Total Gate Charge
Lower and Tighter V
SD
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
Typical Applications
G
S
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
GS
= 10 MW)
Gate−to−Source Voltage, Continuous
− Non−Repetitive (t
p
v10
ms)
Drain Current
− Continuous @ T
A
= 25°C
− Continuous @ T
A
= 100°C
− Single Pulse (t
p
v10
ms)
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
Total Power Dissipation @ T
A
= 25°C (Note 1)
Total Power Dissipation @ T
A
= 25°C (Note 2)
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C (Note 3)
(V
DD
= 50 Vdc, V
GS
= 10 Vdc, L = 1.0 mH,
I
L(pk)
= 25 A, V
DS
= 60 Vdc, R
G
= 25
W)
Thermal Resistance − Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
Symbol
V
DSS
V
DGR
V
GS
V
GS
I
D
I
D
I
DM
P
D
Value
60
60
"20
"30
32
22
90
93.75
0.625
2.88
1.5
−55 to
+175
313
Unit
Vdc
Vdc
Vdc
1 2
Adc
Apk
W
W/°C
W
W
°C
mJ
1
R
qJC
R
qJA
R
qJA
T
L
1.6
52
100
260
°C/W
2
3
4
DPAK
CASE 369C
STYLE 2
MARKING
DIAGRAMS
4
Drain
AYWW
32N06
2
1
3
Drain
Gate
Source
4
Drain
4
AYWW
32N06
1 2 3
Gate Drain Source
32N06
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
DPAK−3
CASE 369D
STYLE 2
T
J
, T
stg
E
AS
3
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 1″ pad size,
(Cu Area 1.127 in
2
).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in
2
).
3. Repetitive rating; pulse width limited by maximum junction temperature.
©
Semiconductor Components Industries, LLC, 2004
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
1
August, 2004 − Rev. 3
Publication Order Number:
NTD32N06/D

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