FDP150N10A — N-Channel PowerTrench® MOSFET
November 2013
FDP150N10A
Features
N-Channel PowerTrench
®
MOSFET
100 V, 50 A, 15 mΩ
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench
®
process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
• R
DS(on)
= 12.5 mΩ (Typ.) @ V
GS
= 10 V, I
D
= 50 A
• Fast Switching Speed
• Low Gate Charge, Q
G
= 16.2 nC (Typ.)
• High Performance Trench Technology for Extremely Low
R
DS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter
D
GD
S
G
TO-220
S
Absolute Maximum Ratings
T
C
= 25
o
C unless otherwise noted.
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
=
25
o
C)
o
C
Parameter
FDP150N10A_F102
100
±20
o
Unit
V
V
A
A
mJ
V/ns
W
W/
o
C
o
C
o
C
- Continuous (T
C
= 25 C)
- Continuous (T
C
= 100 C)
- Pulsed
(Note 1)
(Note 2)
(Note 3)
- Derate Above 25
o
50
36
200
84.6
6.0
91
0.61
-55 to +175
300
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP150N10A_F102
1.6
62.5
Unit
o
C/W
©2011 Fairchild Semiconductor Corporation
FDP150N10A Rev. C1
1
www.fairchildsemi.com
FDP150N10A — N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Part Number
FDP150N10A_F102
Top Mark
FDP150N10A
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics
T
C
= 25
o
C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
DSS
ΔBV
DSS
/
ΔT
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I
D
= 250
μA,
V
GS
= 0 V
I
D
= 250
μA,
Referenced to 25
o
C
V
DS
= 80 V, V
GS
= 0 V
V
DS
= 80 V, T
C
= 150 C
V
GS
= ±20 V, V
DS
= 0 V
o
100
-
-
-
-
-
0.08
-
-
-
-
-
1
500
±100
V
V/
o
C
μA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= V
DS
, I
D
= 250
μA
V
GS
= 10 V, I
D
= 50 A
V
DS
= 10 V, I
D
= 50 A
2.0
-
-
-
12.5
40
4.0
15.0
-
V
mΩ
S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss(er)
Q
g(tot)
Q
gs
Q
gs2
Q
gd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Engry Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
f = 1 MHz
V
DS
= 50 V , V
GS
= 10 V,
I
D
= 50 A
(Note 4)
V
DS
= 50 V, V
GS
= 0 V,
f = 1 MHz
V
DS
= 50 V, V
GS
= 0 V
-
-
-
-
-
-
-
-
-
1080
267
11
436
16.2
5.3
2.6
3.7
1.3
1440
355
-
-
21.0
-
-
-
-
pF
pF
pF
pF
nC
nC
nC
nC
Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
= 50 V, I
D
= 50 A,
V
GS
= 10 V, R
G
= 4.7
Ω
(Note 4)
-
-
-
-
13
16
21
5
36
42
52
20
ns
ns
ns
ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
SD
= 50 A
V
GS
= 0 V, V
DD
= 50 V, I
SD
= 50 A,
dI
F
/dt = 100 A/μs
-
-
-
-
-
-
-
-
50
55
50
200
1.3
-
-
A
A
V
ns
nC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 2 mH, I
AS
= 9.2 A, R
G
= 25
Ω,
starting T
J
= 25°C.
3. I
SD
≤
100 A, di/dt
≤
200 A/μs, V
DD
≤
BV
DSS
, starting T
J
= 25°C.
4. Essentially independent of operating temperature typical characteristics.
©2011 Fairchild Semiconductor Corporation
FDP150N10A Rev. C1
2
www.fairchildsemi.com
FDP150N10A — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
400
V
GS
= 15.0V
10.0V
8.0V
6.5V
6.0V
5.5V
5.0V
Figure 2. Transfer Characteristics
200
100
I
D
, Drain Current[A]
*Notes:
1. V
DS
= 10V
2. 250
μ
s Pulse Test
175 C
25 C
o
o
o
I
D
, Drain Current[A]
100
10
-55 C
10
*Notes:
1. 250
μ
s Pulse Test
2. T
C
= 25 C
o
4
0.1
1
V
DS
, Drain-Source Voltage[V]
7
1
2
3
4
5
6
V
GS
, Gate-Source Voltage[V]
7
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
40
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
400
R
DS(ON)
[
m
Ω
]
,
Drain-Source On-Resistance
I
S
, Reverse Drain Current [A]
30
100
175 C
o
20
V
GS
= 10V
25 C
o
10
10
V
GS
= 20V
0
*Note: T
C
= 25 C
o
*Notes:
1. V
GS
= 0V
0
50
100
150
I
D
, Drain Current [A]
200
1
0.0
2. 250
μ
s Pulse Test
0.5
1.0
V
SD
, Body Diode Forward Voltage [V]
1.5
Figure 5. Capacitance Characteristics
3000
1000
Capacitances [pF]
C
oss
C
iss
Figure 6. Gate Charge Characteristics
10
V
GS
, Gate-Source Voltage [V]
V
DS
= 20V
V
DS
= 50V
V
DS
= 80V
8
6
100
*Note:
1. V
GS
= 0V
2. f = 1MHz
4
10
5
0.1
Ciss = Cgs + Cgd
(
Cds = shorted
)
Coss = Cds + Cgd
Crss = Cgd
C
rss
2
*Note: I
D
= 50A
1
10
V
DS
, Drain-Source Voltage [V]
100
0
0
5
10
15
Q
g
, Total Gate Charge [nC]
20
©2011 Fairchild Semiconductor Corporation
FDP150N10A Rev. C1
3
www.fairchildsemi.com
FDP150N10A — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.10
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
1.08
Figure 8. On-Resistance Variation
vs. Temperature
2.5
R
DS(on)
, [Normalized]
Drain-Source On-Resistance
2.0
1.04
1.00
1.5
0.96
1.0
*Notes:
1. V
GS
= 10V
2. I
D
= 50A
*Notes:
1. V
GS
= 0V
2. I
D
= 250
μ
A
0.92
-100
-50
0
50
100
150
o
T
J
, Junction Temperature
[
C
]
200
0.5
-100
-50
0
50
100
150
o
T
J
, Junction Temperature
[
C
]
200
Figure 9. Maximum Safe Operating Area
300
100
I
D
, Drain Current [A]
10
μ
s
Figure 10. Maximum Drain Current
vs. Case Temperature
60
V
GS
= 10V
50
100
μ
s
10
1ms
I
D
, Drain Current [A]
40
30
20
10
R
θ
JC
= 1.6 C/W
o
1
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T
C
= 25 C
2. T
J
= 175 C
3. Single Pulse
o
o
10ms
DC
0.1
0.01
0.1
1
10
V
DS
, Drain-Source Voltage [V]
100 200
0
25
50
75
100
125
150
o
T
C
, Case Temperature
[
C
]
175
Figure 11. Eoss vs. Drain to Source Voltage
1.5
I
AS
, AVALANCHE CURRENT (A)
Figure 12. Unclamped Inductive
Switching Capability
20
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
-V
DD
)
If R = 0
t
AV
= (L/R)In[(I
AS
*R)/(1.3*RATED BV
DSS
-V
DD
)+1]
1.2
E
OSS
,
[
μ
J
]
10
0.9
STARTING T
J
= 25
C
o
0.6
0.3
STARTING T
J
= 150 C
o
0.0
0
25
50
75
V
DS
, Drain to Source Voltage
[
V
]
100
1
0.01
0.1
1
10
100
t
AV
, TIME IN AVALANCHE (ms)
1000
©2011 Fairchild Semiconductor Corporation
FDP150N10A Rev. C1
4
www.fairchildsemi.com
FDP150N10A — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
(Continued)
Figure 13. Transient Thermal Response Curve
2
Z
θJC
(t), Thermal Response [
o
C/W]
Thermal Response
[
Z
θ
JC
]
1
0.5
0.2
0.1
P
DM
t
1
t
2
o
0.1
0.05
0.02
0.01
Single pulse
*Notes:
1. Z
θ
JC
(t) = 1.6 C/W Max.
2. Duty Factor, D= t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
0.01
-5
10
10
-4
10
10
Rectangular Pulse Duration [sec]
t
1
, Rectangular Pulse Duration [sec]
-3
-2
10
-1
1
©2011 Fairchild Semiconductor Corporation
FDP150N10A Rev. C1
5
www.fairchildsemi.com
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