3D
BGX7100
HV
Transmitter IQ modulator
Rev. 5 — 3 September 2012
Product data sheet
1. General description
The BGX7100 device combines high performance, high linearity I and Q modulation paths
for use in radio frequency up-conversion. It supports RF frequency outputs in the range
from 400 MHz to 4000 MHz. The BGX7100 IQ modulator is performance independent of
the IQ common mode voltage. The modulator provides a typical output power at 1 dB gain
compression (P
L(1dB)
) value of 12 dBm and a typical 27 dBm output third-order intercept
point (IP3
o
). Unadjusted sideband suppression and carrier feedthrough are 50 dBc and
45
dBm respectively. A hardware control pin provides a fast power-down/power-up mode
functionality which allows significant power saving.
2. Features and benefits
400 MHz to 4000 MHz frequency operating range
Stable performance across 0.25 V to 3.3 V common-mode voltage input
Independent low-current power-down hardware control pin
12 dBm output
1
dB compression point
27 dBm output third-order intercept point (typical)
Integrated active biasing
Single 5 V supply
180
differential IQ input impedance
Matched 50
single-ended RF output impedance
ESD protection at all pins
3. Applications
Mobile network infrastructure
Microwave and broadband
RF and IF applications
Industrial applications
4. Device family
The BGX7100 operates in the RF frequency range of 400 MHz to 4000 MHz with
modulation bandwidths up to 400 MHz.
QF
N2
4
NXP Semiconductors
BGX7100
Transmitter IQ modulator
5. Ordering information
Table 1.
Ordering information
Package
Name
BGX7100HN
HVQFN24
Description
plastic thermal enhanced very thin quad flat package; no leads; 24
terminals; body 4
4
0.85 mm
Version
SOT616-3
Type number
6. Functional diagram
BGX7100
I MODULATION IN
LOCAL OSCILLATOR IN
0°
90°
RF OUT
Q MODULATION IN
001aao016
Fig 1.
Functional block diagram
Differential I and Q baseband inputs are each fed to an associated upconverter mixer. The
Local Oscillator (LO) carrier input is buffered and split into 0 degree and 90 degree
signals. The in-phase signal is passed to the I mixer and the 90 degree phase-changed
signal is passed to the Q mixer. The outputs of the mixers are summed to produce the
resulting RF output signal.
7. Pinning information
7.1 Pinning
The BGX7100 device pinout is designed to allow easy interfacing when mounted on a
Printed-Circuit Board (PCB). When viewing the device from above, the two differential IQ
baseband input paths are at the top and bottom. The common LO input is at the left and
the RF output at the right. Multiple power and ground pins allow for independent supply
domains, improving isolation between blocks. A small package footprint is chosen to
reduce bond-wire induced series inductance in the RF ports.
The input and output pin matching is described in
Section 12 “Application information”.
BGX7100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 5 — 3 September 2012
2 of 38
NXP Semiconductors
BGX7100
Transmitter IQ modulator
24 V
CC_LO(5V0)
22 MODI_N
21 MODI_P
23 i.c.
POFF_P
LOGND
LO_P
LO_N
LOGND
LOGND
1
2
3
4
5
6
MODQ_P 10
RFGND 11
RFGND 12
7
8
9
19 i.c.
18 V
CC_RF(5V0)
17 RFGND
16 RFOUT
15 i.c.
14 RFGND
13 i.c.
001aan769
terminal 1
index area
BGX7100
RFGND
RFGND
Transparent top view
Fig 2.
Pin configuration
7.2 Pin description
Table 2.
Symbol
POFF_P
LOGND
LO_P
LO_N
LOGND
LOGND
RFGND
RFGND
MODQ_N
MODQ_P
RFGND
RFGND
i.c.
RFGND
i.c.
RFOUT
RFGND
V
CC_RF(5V0)
i.c.
RFGND
MODI_P
MODI_N
Pin description
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
Type
[1]
I
G
I
I
G
G
G
G
I
I
G
G
-
G
-
O
G
P
-
G
I
I
Description
active HIGH logic input to power-down modulator
LO ground
LO positive input
[2]
LO negative input
[2]
LO ground
LO ground
RF ground
RF ground
modulator quadrature negative input
modulator quadrature positive input
RF ground
RF ground
internally connected; to be tied to ground
RF ground
internally connected; to be tied to ground
modulator single-ended RF output
[2]
RF ground
RF analog power supply 5 V
internally connected; to be tied to ground
RF ground
modulator in-phase positive input
modulator in-phase negative input
BGX7100
All information provided in this document is subject to legal disclaimers.
MODQ_N
20 RFGND
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 5 — 3 September 2012
3 of 38
NXP Semiconductors
BGX7100
Transmitter IQ modulator
Pin description
…continued
Pin
23
24
-
Type
[1]
-
P
G
Description
internally connected; to be tied to ground
LO analog power supply 5 V
exposed die pad; must be connected to RF ground
Table 2.
Symbol
i.c.
V
CC_LO(5V0)
Exposed die
pad
[1]
[2]
G = ground; I = input; O = output; P = power.
AC coupling required as shown in
Figure 4 “Typical wideband application diagram”.
8. Functional description
8.1 General
Each IQ baseband input has a 180
differential input impedance allowing straightforward
matching, from the DAC output through the baseband filter. The device allows operation
with IQ input common-mode voltages between 0.25 V and 3.3 V allowing direct
connection to a broad family of DACs. The LO and RF ports provide broadband 50
termination to RF source and loads.
The chip can be placed in inactive mode (see
Section 8.2 “Shutdown control”).
8.2 Shutdown control
Table 3.
Mode
Idle
Active
Shutdown control
Mode description
modulator fully off; minimal supply current
modulator active mode
Functional description
shutdown enabled
shutdown disabled
POFF_P
> 1.5 V
< 0.5 V
The modulator can be placed into inactive mode by the voltage level at power-up disable
pin (pin 1, POFF_P). The time required to pass between active and low-current states is
less than 1
s.
The shutdown feature of IQ modulator during switching does not induce any unlock of the
LO synthesizer in base station application thanks to the low impedance variation of the LO
input.
The graph (see
Figure 3)
describes the impact on LO impedance variation during the
switching time.
BGX7100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 5 — 3 September 2012
4 of 38
NXP Semiconductors
BGX7100
Transmitter IQ modulator
-13.55
S11
(dB)
-13.57
aaa-004637
-13.59
off
-13.61
on
-13.63
on
-13.65
0
2
4
6
8
t (μs)
10
Fig 3.
LO input return loss variation (S11_LO)
9. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CC
P
i(lo)
P
o(RF)
T
mb
T
j
T
stg
V
ESD
Parameter
supply voltage
local oscillator input power
RF output power
mounting base temperature
junction temperature
storage temperature
electrostatic discharge
voltage
EIA/JESD22-A114 (HBM)
EIA/JESD22-C101
(FCDM)
Conditions
Min
-
-
-
40
-
65
650
Max
5.5
16
20
+85
+150
+150
+650
Unit
V
dBm
dBm
C
C
C
V
2500
+2500 V
BGX7100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 5 — 3 September 2012
5 of 38
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