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200HFR80PBV

Description
200 A, 800 V, SILICON, RECTIFIER DIODE, DO-205AC
CategoryDiscrete semiconductor    diode   
File Size55KB,6 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

200HFR80PBV Overview

200 A, 800 V, SILICON, RECTIFIER DIODE, DO-205AC

200HFR80PBV Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionO-MUPM-H1
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH SURGE CAPABILITY
applicationGENERAL PURPOSE
Shell connectionANODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.5 V
JEDEC-95 codeDO-205AC
JESD-30 codeO-MUPM-H1
JESD-609 codee0
Maximum non-repetitive peak forward current4610 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature180 °C
Minimum operating temperature-40 °C
Maximum output current200 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal surfaceTIN LEAD
Terminal formHIGH CURRENT CABLE
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Bulletin I2020 rev. A 07/94
200HF(R) SERIES
STANDARD RECOVERY DIODES
Stud Version
Features
High current carrying capability
High surge current capability
Types up to 1200V V
RRM
Stud cathode and stud anode version
Standard JEDEC types
Diffused junction
200 A
Typical Applications
Battery chargers
Converters
Power supplies
Machine tool controls
Major Ratings and Characteristics
Parameters
I
F(AV)
@ T
C
I
F(RMS)
I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
RRM
range
T
J
200HF(R)
200
125
314
4400
4610
97
88
400 to 1200
-40 to 180
Units
A
°C
A
A
A
KA
2
s
KA
2
s
V
°C
case style
DO-205AC (DO-30)
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