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2W08G

Description
2 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size40KB,4 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
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2W08G Overview

2 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

2W08G Parametric

Parameter NameAttribute value
package instructionO-PBCY-W4
Contacts4
Reach Compliance Codecompli
Other featuresHIGH RELIABILITY
Minimum breakdown voltage800 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeO-PBCY-W4
Maximum non-repetitive peak forward current60 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Base Number Matches1
WTE
POWER SEMICONDUCTORS
2W005G – 2W10G
Pb
2.0A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
Features
!
Glass Passivated Die Construction
!
Low Forward Voltage Drop
A
!
High Current Capability
!
High Reliability
!
High Surge Current Capability
B
!
Ideal for Printed Circuit Boards
+ ~ ~ -
!
Excellent Case Dielectric Strength

C
D
E
~
-
+
G
G
~
Mechanical Data
!
!
!
!
!
!
!
Case: RB-20, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Weight: 1.1 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
RB-20
Dim
Min
Max
8.60
9.40
A
6.90
7.40
B
27.9
C
25.4
D
0.71
0.81
E
4.60
5.60
G
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @T
A
= 50°C
(Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage (per element)
@I
F
= 2.0A
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
2W005G 2W01G 2W02G 2W04G 2W06G 2W08G 2W10G
Unit
50
35
100
70
200
140
400
280
2.0
600
420
800
560
1000
700
V
V
A
I
FSM
V
FM
I
RM
T
j
T
STG
60
1.0
5.0
500
-55 to +150
-55 to +150
A
V
µA
°C
°C
Peak Reverse Current
@T
A
= 25°C
At Rated DC Blocking Voltage @T
A
= 100°C
Operating Temperature Range
Storage Temperature Range
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2W005G – 2W10G
1 of 4
© 2006 Won-Top Electronics

2W08G Related Products

2W08G 2W005G 2W01G 2W02G 2W04G 2W10G 2W06G
Description 2 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
package instruction O-PBCY-W4 O-PBCY-W4 O-PBCY-W4 O-PBCY-W4 O-PBCY-W4 O-PBCY-W4 O-PBCY-W4
Contacts 4 4 4 4 4 4 4
Reach Compliance Code compli compli compli compli compli compli compli
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Minimum breakdown voltage 800 V 50 V 100 V 200 V 400 V 1000 V 600 V
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 code O-PBCY-W4 O-PBCY-W4 O-PBCY-W4 O-PBCY-W4 O-PBCY-W4 O-PBCY-W4 O-PBCY-W4
Maximum non-repetitive peak forward current 60 A 60 A 60 A 60 A 60 A 60 A 60 A
Number of components 4 4 4 4 4 4 4
Phase 1 1 1 1 1 1 1
Number of terminals 4 4 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 2 A 2 A 2 A 2 A 2 A 2 A 2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Maximum repetitive peak reverse voltage 800 V 50 V 100 V 200 V 400 V 1000 V 600 V
surface mount NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Base Number Matches 1 - 1 1 1 1 1

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