52 standard frequencies between 3.57 MHz and 77.76 MHz
100% pin-to-pin drop-in replacement to quartz-based XO
Excellent total frequency stability as low as ±20 ppm
Operating temperature from -40°C to 85°C. For 125°C and/or
-55°C options, refer to
SiT1618, SiT8918, SiT8920
Low power consumption of 3.5 mA typical at 1.8V
Standby mode for longer battery life
Fast startup time of 5 ms
LVCMOS/HCMOS compatible output
Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5,
5.0 x 3.2, 7.0 x 5.0 mm x mm
Instant samples with
Time Machine II
and
Field Programmable
Oscillators
Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books,
SSD, GPON, EPON, etc
Ideal for high-speed serial protocols such as: USB,
SATA, SAS, Firewire, 100M / 1G / 10G Ethernet, etc.
RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
For AEC-Q100 oscillators, refer to
SiT8924
and
SiT8925
Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise
stated. Typical values are at 25°C and nominal supply voltage.
Table 1. Electrical Characteristics
Parameters
Output Frequency Range
Symbol
f
Min.
Typ.
Max.
Unit
Condition
Refer to
Table 13
for the exact list of supported frequencies
Frequency Range
52 standard frequencies between
MHz
3.57 MHz and 77.76 MHz
-20
-25
-50
-20
-40
1.62
2.25
2.52
2.7
2.97
2.25
–
–
–
–
–
–
–
–
45
–
–
–
90%
Frequency Stability
F_stab
Frequency Stability and Aging
–
+20
ppm
Inclusive of initial tolerance at 25°C, 1st year aging at 25°C,
and variations over operating temperature, rated power
–
+25
ppm
supply voltage and load.
–
+50
ppm
Operating Temperature Range
–
+70
°C
Extended Commercial
–
+85
°C
Industrial
Supply Voltage and Current Consumption
1.8
1.98
V
Contact
SiTime
for 1.5V support
2.5
2.75
V
2.8
3.08
V
3.0
3.3
V
3.3
3.63
V
–
3.63
V
3.8
4.5
mA
No load condition, f = 20 MHz, Vdd = 2.8V to 3.3V
3.7
4.2
mA
No load condition, f = 20 MHz, Vdd = 2.5V
3.5
4.1
mA
No load condition, f = 20 MHz, Vdd = 1.8V
–
4.2
mA
Vdd = 2.5V to 3.3V, OE = GND, Output in high-Z state
–
4.0
mA
Vdd = 1.8 V. OE = GND, Output in high-Z state
2.6
4.3
ST = GND, Vdd = 2.8V to 3.3V, Output is weakly pulled down
̅ ̅̅
A
1.4
2.5
ST = GND, Vdd = 2.5V, Output is weakly pulled down
̅ ̅̅
A
0.6
1.3
ST = GND, Vdd = 1.8V, Output is weakly pulled down
̅ ̅̅
A
LVCMOS Output Characteristics
–
1
1.3
–
–
55
2
2.5
2
–
%
ns
ns
ns
Vdd
All Vdds. See Duty Cycle definition in
Figure 3
and
Footnote 6
Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%
Vdd =1.8V, 20% - 80%
Vdd = 2.25V - 3.63V, 20% - 80%
IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOH = -2 mA (Vdd = 1.8V)
IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOL = 2 mA (Vdd = 1.8V)
Operating Temperature Range
T_use
Supply Voltage
Vdd
Current Consumption
Idd
OE Disable Current
Standby Current
I_OD
I_std
Duty Cycle
Rise/Fall Time
DC
Tr, Tf
Output High Voltage
VOH
Output Low Voltage
VOL
–
–
10%
Vdd
Rev 1.04
January 30, 2018
www.sitime.com
SiT1602B
Low Power, Standard Frequency Oscillator
Table 1. Electrical Characteristics (continued)
Parameters
Symbol
Min.
Typ.
–
–
87
–
–
–
–
1.8
1.8
12
14
0.5
1.3
Max.
–
30%
150
–
Unit
Pin 1, OE or ST
̅ ̅̅
Pin 1, OE or ST
̅ ̅̅
Pin 1, OE logic high or logic low, or ST logic high
̅ ̅̅
Pin 1, ST logic low
̅ ̅̅
Condition
Input Characteristics
Input High Voltage
Input Low Voltage
Input Pull-up Impedance
VIH
VIL
Z_in
70%
–
50
2
Startup Time
Enable/Disable Time
Resume Time
RMS Period Jitter
Peak-to-peak Period Jitter
RMS Phase Jitter (random)
–
–
–
–
–
T_pk
T_phj
–
–
–
–
Vdd
Vdd
k
M
ms
ns
ms
ps
ps
ps
ps
ps
ps
Startup and Resume Timing
T_start
T_oe
T_resume
T_jitt
5
138
5
Jitter
3
3
25
30
0.9
2
f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
f = 75 MHz, Vdd = 1.8V
f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
f = 75 MHz, Vdd = 1.8V
f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz
f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz
Measured from the time Vdd reaches its rated minimum value
f = 77.76 MHz. For other frequencies, T_oe = 100 ns + 3 *
cycles
Measured from the time ST pin crosses 50% threshold
̅ ̅̅
Table 2. Pin Description
Pin
Symbol
[1]
Functionality
Output Enable
H : specified frequency output
L: output is high impedance. Only output driver is disabled.
H : specified frequency output
L: output is low (weak pull down). Device goes to sleep mode. Supply
current reduces to I_std.
Any voltage between 0 and Vdd or Open : Specified frequency
output. Pin 1 has no function.
Electrical ground
Oscillator output
Power supply voltage
[2]
[1]
[1]
Top View
OE/ST/NC
VDD
1
OE/ST /NC
̅ ̅̅
Standby
No Connect
2
3
4
GND
OUT
VDD
Power
Output
Power
GND
OUT
Figure 1. Pin Assignments
Notes:
1. In OE or ST mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option.
̅ ̅̅
2. A capacitor of value 0.1 µF or higher between Vdd and GND is required.
Rev 1.04
Page 2 of 17
www.sitime.com
SiT1602B
Low Power, Standard Frequency Oscillator
Table 3. Absolute Maximum Limits
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance
of the IC is only guaranteed within the operational specifications, not at absolute maximum rat ings.
Parameter
Storage Temperature
Vdd
Electrostatic Discharge
Soldering Temperature (follow standard Pb free
soldering guidelines)
Junction Temperature
[3]
Min.
-65
-0.5
–
–
–
Max.
150
4
2000
260
150
Unit
°C
V
V
°C
°C
Note:
3. Exceeding this temperature for extended period of time may damage the device.
Table 4. Thermal Consideration
[4]
Package
7050
5032
3225
2520
2016
Note:
4. Refer to JESD51 for
JA
and
JC
definitions, and reference layout used to determine the
JA
and
JC
values in the above table.
JA, 4 Layer Board
(°C/W)
142
97
109
117
152
JA, 2 Layer Board
(°C/W)
273
199
212
222
252
JC, Bottom
(°C/W)
30
24
27
26
36
Table 5. Maximum Operating Junction Temperature
[5]
Max Operating Temperature (ambient)
70°C
85°C
Maximum Operating Junction Temperature
80°C
95°C
Note:
5. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.
Table 6. Environmental Compliance
Parameter
Mechanical Shock
Mechanical Vibration
Temperature Cycle
Solderability
Moisture Sensitivity Level
Condition/Test Method
MIL-STD-883F, Method 2002
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method 2003
MSL1 @ 260°C
Rev 1.04
Page 3 of 17
www.sitime.com
SiT1602B
Low Power, Standard Frequency Oscillator
Test Circuit and Waveform
[6]
Vdd
Vout
Test Point
tr
80% Vdd
tf
4
Power
Supply
0.1 uF
1
3
2
15pF
(including probe
and fixture
capacitance)
50%
20% Vdd
High Pulse
(TH)
Period
Low Pulse
(TL)
Vdd
OE/ST Function
1 kΩ
Figure 2. Test Circuit
Note:
6. Duty Cycle is computed as Duty Cycle = TH/Period.
Figure 3. Waveform
Timing Diagrams
90% Vdd
Vdd
Vdd
50% Vdd
[7]
Pin 4 Voltage
T_start
No Glitch
during start up
ST Voltage
T_resume
CLK Output
HZ
T_start: Time to start from power-off
CLK Output
HZ
T_resume: Time to resume from ST
Figure 4. Startup Timing (OE/ ST̅ Mode)
̅ ̅
Figure 5. Standby Resume Timing ( ST̅ Mode Only)
̅ ̅
Vdd
50% Vdd
OE Voltage
T_oe
Vdd
OE Voltage
50% Vdd
T_oe
CLK Output
HZ
T_oe: Time to re-enable the clock output
CLK Output
HZ
T_oe: Time to put the output in High Z mode
Figure 6. OE Enable Timing (OE Mode Only)
Figure 7. OE Disable Timing (OE Mode Only)
Note:
7. SiT1602 has “no runt” pulses and “no glitch” output during startup or resume.
I am currently playing with wince6 and have encountered some problems. I would like to ask for your help. Flash does not display a drive letter, but its capacity can be recognized in Storage Manager....
A single-chip microcomputer is a simplified microcomputer. The CPU itself has ROM and RAM memory. The CPU also has a bus inside the chip. IC (integrated circuit) technology is to make circuits on a si...
According to the official example, the sending and receiving are back and forth, otherwise it keeps sending. I would like to ask if there is a separate function of receiving? Can you give me a program...
By Clark Kinnaird, Texas Instruments There’s a story about Texas folk hero Pecos Bill: Someone bet him that he couldn’t swim from Galveston, Texas, across the Gulf of Mexico to Key West, Florida. He t...
1. Design Overview
1. Design Intent
The rapid development of medical imaging technology continues to promote the progress of modern medicine. CT, MRI, and PET are widely ...[Details]
As medical equipment develops towards intelligence, miniaturization, serialization, digitization, and multi-functions, the logic control devices in medical equipment have also evolved from medium- a...[Details]
Maximize instrument utilization and reduce
test times
Increasing the throughput of automated test systems can improve efficiency. Using off-the-shelf tools (COTS) such as multicore proc...[Details]
With the development of the automobile industry, the complexity and information density of automobile information systems are increasing. Displays are no longer just basic centralized instrument di...[Details]
Third generation (3G) mobile phones offer a variety of features with more functionality. As consumers enjoy the latest and better features of these communication devices, they continue to demand lo...[Details]
Signal sources have developed to a very wide range today. We can classify them according to the frequency range: ultra-low frequency (0.1m～1kHz), audio (20Hz～20kHz), video (20kHz～10MHz), radio fre...[Details]
The overcurrent and overheating coordinated protection technology implemented by polymer positive temperature coefficient devices (PPTC) can protect motors, controllers and electronic components in...[Details]
introduction
With the rapid development of my country's aviation industry, various new aircraft and control equipment have been successfully developed. Some previous measurement and control eq...[Details]
introduction
The most common flight state of a fixed-wing aircraft is horizontal flight. If it is allowed to fly at a large angle, the action cannot be maintained all the time. If it is al...[Details]
Lithium-ion batteries have a high energy-to-weight and energy-to-volume ratio, no memory effect, can be recharged many times, have a long service life, and are becoming increasingly cheaper. A good...[Details]
In order to meet the requirements of video systems, industrial and medical display and video transmission applications such as eliminating the limitation of long connection cables, increasing data ...[Details]
0Introduction
As a service robot in the field of medical care, the application of smart wheelchairs makes extensive use of mobile robot technology. The key technologies involved in the researc...[Details]
introduction
With the increasing popularity of Internet applications, the degree of information sharing is constantly improving. The digitization and networking of embedded devices has b...[Details]
Battery system architecture
For many years, nickel-cadmium batteries and later nickel-metal hydride battery technology have dominated the market. Lithium batteries have only entered ...[Details]
Test equipment manufacturers are constantly challenged to develop new test solutions that meet the latest product testing needs of their customers, and they often design specialized hardware t...[Details]
FPGA/CPLD
京公网安备 11010802033920号
EEWORLD
