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VS-C4PU3006LHN3

Description
DIODE GEN PURP 600V 15A TO247AD
Categorysemiconductor    Discrete semiconductor   
File Size133KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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VS-C4PU3006LHN3 Overview

DIODE GEN PURP 600V 15A TO247AD

VS-C4PU3006LHN3 Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)600V
Current - average rectification (Io)15A
Voltage at different If - Forward (Vf1.55V @ 15A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)60ns
Current at different Vr - Reverse leakage current15µA @ 600V
Capacitance at different Vr, F-
Installation typeThrough hole
Package/casingTO-247-3
Supplier device packagingTO-247AD
Operating Temperature - Junction-55°C ~ 175°C
VS-C4PU3006LHN3
www.vishay.com
Vishay Semiconductors
Ultrafast Soft Recovery Diode,
2 x 15 A FRED Pt
®
Gen 4
Base
common
cathode
2
FEATURES
• Gen 4 FRED Pt
®
technology
• Low I
RRM
and reverse recovery charge
• Very low forward voltage drop
• Polyimide passivated chip for high reliability
standard
1
2
3
• 175 °C operating junction temperature
TO-247AD 3L
1
3
Anode
Anode
2
1
2
Common
cathode
• AEC-Q101 qualified, meets JESD 201 class 2
whisker test
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
TO-247AD 3L
2 x 15 A
600 V
1.12 V
See Recovery table
175 °C
Single die
DESCRIPTION
Gen 4 Fred technology, state of the art, ultralow V
F
, soft
switching optimized for Discontinuous (Critical) Mode (DCM)
and IGBT F/W diode.
The minimized conduction loss, optimized stored charge
and low recovery current minimize the switching losses and
reduce power dissipation in the switching element and
snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current, per leg
Operating junction and storage temperature
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 146 °C
T
C
= 25 °C, t
p
= 8.3 ms, half sine wave
TEST CONDITIONS
MAX.
600
15
200
-55 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, blocking voltage
SYMBOL
V
BR
, V
R
TEST CONDITIONS
I
R
= 100 μA
I
F
= 15 A
I
F
= 30 A
Forward voltage
V
F
I
F
= 15 A, T
J
= 125 °C
I
F
= 30 A, T
J
= 125 °C
I
F
= 15 A, T
J
= 150 °C
I
F
= 30 A, T
J
= 150 °C
Reverse leakage current
Junction capacitance
I
R
C
T
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
R
= 600 V
MIN.
600
-
-
-
-
-
-
-
-
-
TYP.
-
1.32
1.53
1.17
1.42
1.12
1.38
-
-
16
MAX.
-
1.55
-
-
-
1.28
-
15
500
-
μA
pF
V
UNITS
Revision: 21-Feb-17
Document Number: 95937
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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