15 A Low-Side RF MOSFET Driver
IXRFDSM607X2
Description
The IXRFDSM607X2 is a dual CMOS high-speed,
high-current gate driver specifically designed to drive
MOSFETs in Class D and E HF RF applications as
well as other applications requiring ultrafast rise and
fall times or short minimum pulse widths. The
IXRFDSM607X2 can source and sink 7 A of peak cur-
rent per driver, 15 A when combined, while producing
voltage rise and fall times of less than 5 ns and mini-
mum pulse widths of 8 ns. The inputs of the driver are
compatible with TTL or CMOS and are fully immune to
latch up over the entire operating range. Designed
with small internal delays, cross conduction or current
shoot-through is virtually eliminated. The features and
wide safety margin in operating voltage and power
make the IXRFDSM607X2 unmatched in performance
and value.
The surface mount IXRFDSM607X2 is packaged in a
low-inductance surface mount package incorporating
advanced layout techniques to minimize stray lead in-
ductances for optimum switching performance. The
input and output pins can be separated or combined
for dual or single driver operation. However, both
sides are ground referenced together and cannot be
operated ground isolated from each other.
Features
High Peak Output Current
Low Output Impedance
Low Quiescent Supply Current
Low Propagation Delay
High Capacitive Load Drive Capability
Wide Operating Voltage Range
Single or Dual Driver Operation Capable
Applications
RF MOSFET Driver
Class D and E RF Generators
Multi-MHz Switch Mode Supplies
Pulse Transformer Driver
Pulse Laser Diode Driver
Pulse Generator
Fig. 1- Block Diagram and Truth Table
IN
OUT
0
1
0
1
1
15 A Low-Side RF MOSFET Driver
IXRFDSM607X2
Absolute Maximum Ratings
Parameter
Supply Voltage V
CC
Input Voltage Level V
IN
All Other Pins
Power Dissipation
T
A (AMBIENT)
≤ 25°C
T
C (CASE)
≤ 25°C
Storage Temperature
Soldering Lead Temperature
(10 seconds maximum)
Value
30V
-5V to V
CC
+ 0.3V
-0.3V to V
CC
+0.3V
2W
100W
Note: 1
-40°C to 150°C
300°C
Parameter
Maximum Junction Temperature
Operating Temperature Range
Thermal Impedance (Junction to Case)
R
ӨJC
Moisture Sensitivity Level (MSL)
Value
150°C
-40°C to 85° C
0.25° C/W
1
Note:
Operating the device outside of the “Absolute Maximum Rat-
ings” may cause permanent damage. Typical values indicate conditions
for which the device is intended to be functional but do not guarantee
specific performance limits. The guaranteed specifications apply only for
the test conditions listed. Exposure to absolute maximum conditions for
extended periods may impact device reliability.
Electrical Characteristics
Note: 1-
Limited by high frequency performance, not package dissipa-
tion.
Unless otherwise noted, T
A
= 25° C, 8V < V
CC
< 30V.
All voltage measurements with respect to GND. IXRFDSM607X2 configured as described in
Test Conditions with combined outputs.
Symbol
V
IH
V
IL
V
HYS
V
IN
I
IN
V
OH
V
OL
R
OH
R
OL
I
PEAK
I
DC
t
R
t
F
t
ONDLY
t
OFFDLY
PW
min
V
CC
I
CC
Parameter
High input voltage
Low input voltage
Input hysteresis
Input voltage range
Input current
High output voltage
Low output voltage
High output resistance
Low output resistance
Peak output current
Continuous output current
Rise time
Fall time
ON propagation delay
OFF propagation delay
Test Conditions
8V ≤ V
CC
≤ 18V
8V ≤ V
CC
≤ 18V
Min
3.5
Typ
Max
Units
V
0.8
0.25
-5
V
CC
+ 0.3
10
V
V
V
µA
V
V
Ω
Ω
A
A
ns
ns
ns
ns
ns
ns
0V≤ V
IN
≤V
CC
-10
V
CC -
0.025
0.42
0.22
15
2.5
4
5
4
5.5
25
22
0.025
V
CC
= 15V I
OUT
= 100mA
V
CC
= 15V I
OUT
= 100mA
V
CC
= 15V
Limited by package power dissipation
V
CC
=15V C
L
=1nF
C
L
=2nF
V
CC
=15V C
L
=1nF
C
L
=2nF
V
CC
=15V C
L
=2nF
V
CC
=15V C
L
=2nF
Minimum pulse width
Power supply voltage
Power supply current
FWHM V
CC
=15V C
L
=1nF
Recommended
V
CC
= 15V, V
IN
= 0V
V
CC
= 15V, V
IN
= 3.5V
V
CC
= 15V, V
IN
= V
CC
8
8
15
0.4
3.8
0.4
18
1
5
1
ns
V
mA
mA
mA
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling and
assembling.
All specifications are subject to change at any time without notice.
2
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