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BLM8D1822S-50PBY

Description
RF MOSFET LDMOS 28V 16-HSOPF
Categorysemiconductor    Discrete semiconductor   
File Size2MB,22 Pages
ManufacturerAmphenol
Websitehttp://www.amphenol.com/
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BLM8D1822S-50PBY Overview

RF MOSFET LDMOS 28V 16-HSOPF

BLM8D1822S-50PBY Parametric

Parameter NameAttribute value
Transistor typeLDMOS
frequency1.805GHz ~ 2.17GHz
Gain26dB
Voltage - Test28V
Rated current1.4µA
Noise Figure-
Current - Test104mA
Power - output5W
Voltage - Rated65V
Package/casingSOT-1211-3
Supplier device packaging16-HSOPF
BLM8D1822S-50PB;
BLM8D1822S-50PBG
LDMOS 2-stage integrated Doherty MMIC
Rev. 3 — 23 November 2017
Product data sheet
1. Product profile
1.1 General description
The BLM8D1822S-50PB(G) is a dual section, 2-stage fully integrated Doherty MMIC
solution using Ampleon’s state of the art GEN8 LDMOS technology. The carrier and
peaking device, input splitter and output combiner are integrated in a single package. This
multiband device is perfectly suited as general purpose driver or small cell final in the
frequency range from 1805 MHz to 2170 MHz. Available in gull wing or flat lead outline.
Table 1.
Performance
Typical RF performance at T
case
= 25
C; I
Dq
= 104 mA (carrier); V
GSq(peaking)
= V
GSq(carrier)
0.65 V.
Test signal: 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01% probability on CCDF; per section.
Test signal
single carrier W-CDMA
f
(MHz)
2167.5
V
DS
(V)
28
P
L(AV)
(W)
5
G
p
(dB)
26.5
D
(%)
37
ACPR
5M
(dBc)
34
1.2 Features and benefits
Integrated input splitter
Integrated output combiner
High efficiency
Designed for broadband operation (frequency 1805 MHz to 2170 MHz)
High section-to-section isolation enabling multiple combinations
Integrated temperature compensated bias
Independent control of carrier and peaking bias
Integrated ESD protection
Excellent thermal stability
Source impedance 50
;
high power gain
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)

BLM8D1822S-50PBY Related Products

BLM8D1822S-50PBY BLM8D1822S-50PBGY
Description RF MOSFET LDMOS 28V 16-HSOPF RF MOSFET LDMOS 28V 16-HSOP
Transistor type LDMOS LDMOS
frequency 1.805GHz ~ 2.17GHz 1.805GHz ~ 2.17GHz
Gain 26dB 26dB
Voltage - Test 28V 28V
Rated current 1.4µA 1.4µA
Current - Test 104mA 104mA
Power - output 5W 5W
Voltage - Rated 65V 65V
Package/casing SOT-1211-3 SOT-1212-3
Supplier device packaging 16-HSOPF 16-HSOP
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