BLS9G2729L-350:
BLS9G2729LS-350
LDMOS S-band radar power transistor
Rev. 1 — 13 April 2017
Product data sheet
1. Product profile
1.1 General description
350 W LDMOS power transistor for S-band applications in the frequency range from
2.7 GHz to 2.9 GHz.
Table 1.
Test information
Typical RF performance at T
case
= 25
C; t
p
= 300
s;
= 10 %; I
Dq
= 400 mA; in a class-AB demo
circuit.
Test signal
pulsed RF
f
(GHz)
2.7 to 2.9
V
DS
(V)
28
P
L
(W)
320
G
p
(dB)
14
D
(%)
50
1.2 Features and benefits
High efficiency
Excellent ruggedness
Designed for S-band operations
Excellent thermal stability
Easy power control
Integrated dual sided ESD protection enables excellent off-state isolation
High flexibility with respect to pulse formats
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz
BLS9G2729L(S)-350
LDMOS S-band radar power transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLS9G2729L-350 (SOT502A)
1
3
2
1
2
3
sym112
BLS9G2729LS-350 (SOT502B)
1
2
3
drain
gate
source
[1]
1
3
2
1
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLS9G2729L-350
BLS9G2729LS-350
-
-
flanged ceramic package; 2 mounting holes; 2 leads
earless flanged ceramic package; 2 leads
Version
SOT502A
SOT502B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
6
65
[1]
Max
65
+13
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF
calculator.
BLS9G2729L-350_2729LS-350
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 13 April 2017
2 of 13
BLS9G2729L(S)-350
LDMOS S-band radar power transistor
5. Thermal characteristics
Table 5.
Z
th(j-mb)
Thermal characteristics
Conditions
Typ
0.07
0.09
0.11
0.09
Unit
K/W
K/W
K/W
K/W
transient thermal impedance from junction to T
case
= 85
C;
P
L
= 350 W
mounting base
t
p
= 100
s;
= 10 %
t
p
= 200
s;
= 10 %
t
p
= 300
s;
= 10 %
t
p
= 100
s;
= 20 %
Symbol Parameter
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 450 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 450 A
Min
65
1.5
-
-
-
-
-
Typ
-
2
-
85
-
4.2
Max Unit
-
2.5
4
-
400
-
V
V
A
A
nA
S
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 4.5 mA
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 15.75 A
0.030 -
Table 7.
RF characteristics
Test signal: pulsed RF; t
p
= 300
s;
= 10 %; RF performance at V
DS
= 28 V; I
Dq
= 400 mA;
T
case
= 25
C; unless otherwise specified; in a class-AB production circuit.
Symbol
G
p
RL
in
D
t
r
t
f
P
L(2dB)
Parameter
power gain
input return loss
drain efficiency
rise time
fall time
output power at 2 dB gain compression
Conditions
P
L
= 320 W
P
L
= 320 W
P
L
= 320 W
P
L
= 320 W
P
L
= 320 W
P
L
= 320 W
Min
12
-
45
-
-
-
-
Typ
14
10
50
0.0
6
6
350
Max Unit
-
-
-
0.3
50
50
-
dB
dB
%
dB
ns
ns
W
P
droop(pulse)
pulse droop power
7. Test information
7.1 Ruggedness in class-AB operation
The BLS9G2729L-350 and BLS9G2729LS-350 are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
DS
= 28 V; I
Dq
= 400 mA; P
L
= 320 W; t
p
= 300
s;
= 10 %.
BLS9G2729L-350_2729LS-350
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 13 April 2017
3 of 13
BLS9G2729L(S)-350
LDMOS S-band radar power transistor
7.2 Impedance information
Table 8.
f
(GHz)
2.7
2.8
2.9
Typical impedance
Z
S
()
1.6
j5.8
2.9
j6.6
8.0
j4.7
Z
L
()
1.6
j3.7
1.8
j3.6
2.2
j3.1
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
BLS9G2729L-350_2729LS-350
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 13 April 2017
4 of 13
BLS9G2729L(S)-350
LDMOS S-band radar power transistor
7.3 Test circuit
40 mm
40 mm
C9
C2 C3
C4
R1
60 mm
C1
C5
C7
C8
C10
C6
C11
C12
C13
amp00336
Printed-Circuit Board (PCB): Rogers 4360G2; thickness = 0.61 mm or equivalent;
r
= 6.15;
thickness copper plating = 35
m.
See
Table 9
for a list of components.
Fig 2.
Component layout
Table 9.
List of components
See
Figure 2
for component layout.
Component
C1
C2, C8, C11
C3, C9, C12
C4, C6, C6
C7
C10, C13
R1
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
SMD resistor
Value
12 pF
1 nF
10
F
15 pF
12 pF
100
F,
63 V
5
0603
Remarks
ATC800A
ATC800B
Murata:
GRM55DR61H106KA88L
ATC800A
ATC800B
BLS9G2729L-350_2729LS-350
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 13 April 2017
5 of 13
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