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BLS9G2729L-350U

Description
RF MOSFET LDMOS 28V SOT502A
Categorysemiconductor    Discrete semiconductor   
File Size1MB,13 Pages
ManufacturerAmphenol
Websitehttp://www.amphenol.com/
Download Datasheet Parametric Compare View All

BLS9G2729L-350U Overview

RF MOSFET LDMOS 28V SOT502A

BLS9G2729L-350U Parametric

Parameter NameAttribute value
Transistor typeLDMOS
frequency2.7GHz ~ 2.9GHz
Gain14dB
Voltage - Test28V
Rated current4µA
Noise Figure-
Current - Test400mA
Power - output350W
Voltage - Rated65V
Package/casingSOT-502A
Supplier device packagingSOT502A
BLS9G2729L-350:
BLS9G2729LS-350
LDMOS S-band radar power transistor
Rev. 1 — 13 April 2017
Product data sheet
1. Product profile
1.1 General description
350 W LDMOS power transistor for S-band applications in the frequency range from
2.7 GHz to 2.9 GHz.
Table 1.
Test information
Typical RF performance at T
case
= 25
C; t
p
= 300
s;
= 10 %; I
Dq
= 400 mA; in a class-AB demo
circuit.
Test signal
pulsed RF
f
(GHz)
2.7 to 2.9
V
DS
(V)
28
P
L
(W)
320
G
p
(dB)
14
D
(%)
50
1.2 Features and benefits
High efficiency
Excellent ruggedness
Designed for S-band operations
Excellent thermal stability
Easy power control
Integrated dual sided ESD protection enables excellent off-state isolation
High flexibility with respect to pulse formats
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz

BLS9G2729L-350U Related Products

BLS9G2729L-350U BLS9G2729LS-350U
Description RF MOSFET LDMOS 28V SOT502A RF MOSFET LDMOS 28V SOT502B
Transistor type LDMOS LDMOS
frequency 2.7GHz ~ 2.9GHz 2.7GHz ~ 2.9GHz
Gain 14dB 14dB
Voltage - Test 28V 28V
Rated current 4µA 4µA
Current - Test 400mA 400mA
Power - output 350W 350W
Voltage - Rated 65V 65V
Package/casing SOT-502A SOT-502B
Supplier device packaging SOT502A SOT502B
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