BLL9G1214L-600;
BLL9G1214LS-600
LDMOS L-band radar power transistor
Rev. 1 — 27 November 2017
Product data sheet
1. Product profile
1.1 General description
600 W LDMOS power transistor for L-band radar applications in the frequency range from
1.2 GHz to 1.4 GHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C; t
p
= 300
s;
= 10 %; I
Dq
= 400 mA; in a class-AB demo
test circuit.
Test signal
pulsed RF
f
(GHz)
1.2 to 1.4
V
DS
(V)
32
P
L(3dB)
(W)
600
G
p
(dB)
19
D
(%)
60
1.2 Features and benefits
High efficiency
Excellent ruggedness
Designed for L-band operation
Excellent thermal stability
Easy power control
Integrated dual sided ESD protection enables excellent off-state isolation
High flexibility with respect to pulse formats
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
L-band radar applications in the frequency range from 1.2 GHz to 1.4 GHz
BLL9G1214L(S)-600
LDMOS L-band radar power transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLL9G1214L-600 (SOT502A)
1
3
2
1
2
3
sym112
BLL9G1214LS-600 (SOT502B)
1
2
3
drain
gate
source
[1]
1
3
2
1
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLL9G1214L-600
BLL9G1214LS-600
-
-
flanged ceramic package; 2 mounting holes; 2 leads
earless flanged ceramic package; 2 leads
Version
SOT502A
SOT502B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
[1]
Min
-
6
65
-
Max
65
+13
+150
225
Unit
V
V
C
C
Continuous use at maximum temperature will affect the reliability. For details refer to the online MTF
calculator.
BLL9G1214L-600_LS-600
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 27 November 2017
2 of 13
BLL9G1214L(S)-600
LDMOS L-band radar power transistor
5. Thermal characteristics
Table 5.
Z
th(j-mb)
Thermal characteristics
Conditions
T
case
= 85
C;
P
L
= 600 W
t
p
= 100
s;
= 10 %
t
p
= 300
s;
= 10 %
t
p
= 500
s;
= 10 %
t
p
= 100
s;
= 20 %
0.11
0.15
0.17
0.15
K/W
K/W
K/W
K/W
Typ
Unit
transient thermal impedance from junction
to mounting base
Symbol Parameter
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
GS
= 0 V; I
D
= 4.5 mA
V
DS
= 10 V; I
D
= 450 mA
V
GS
= 0 V; V
DS
= 32 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 450 mA
Min Typ
65
1.5
-
-
-
-
-
-
2
-
87
-
4.2
Max
-
2.5
5
-
400
-
Unit
V
V
A
A
nA
S
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 15.75 A
0.026 -
Table 7.
RF characteristics
Test signal: pulsed RF; t
p
= 300
s;
= 10 %; RF performance at V
DS
= 32 V; I
Dq
= 400 mA;
T
case
= 25
C; unless otherwise specified, in a class-AB production circuit.
Symbol
G
p
D
RL
in
P
droop(pulse)
t
r
t
f
P
L(2dB)
Parameter
power gain
drain efficiency
input return loss
pulse droop power
rise time
fall time
output power at 2 dB gain compression
Conditions
P
L
= 600 W
P
L
= 600 W
P
L
= 600 W
P
L
= 600 W
P
L
= 600 W
P
L
= 600 W
Min Typ Max
16.8 19
56
-
-
-
-
-
60
7
0.2
6
6
575
-
-
-
0.5
50
50
-
Unit
dB
%
dB
dB
ns
ns
W
BLL9G1214L-600_LS-600
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 27 November 2017
3 of 13
BLL9G1214L(S)-600
LDMOS L-band radar power transistor
7. Test information
7.1 Ruggedness in class-AB operation
The BLL9G1214L-600 and BLL9G1214LS-600 are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
DS
= 32 V; I
Dq
= 400 mA; P
L
= 600 W; t
p
= 300
s;
= 10 %.
7.2 Impedance information
Table 8.
f
(GHz)
1.2
1.3
1.4
Typical impedance
Z
S
()
1.23
j5.79
7.10
j3.33
1.31
j1.89
Z
L
()
1.14
j1.39
1.62
j1.63
2.36
j1.56
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
BLL9G1214L-600_LS-600
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 27 November 2017
4 of 13
BLL9G1214L(S)-600
LDMOS L-band radar power transistor
7.3 Test circuit
40 mm
40 mm
C2 C3 C4
C6 C7 C8
R1
C9
60 mm
C1
C5
C10
C12
C11
C13
amp00535
Printed-Circuit Board (PCB): Rogers 4360; thickness = 0.61 mm;
r
= 6.15; thickness of copper
plating = 35
m
See
Table 9
for a list of components.
Fig 2.
Component layout for class-AB production test circuit
Table 9.
List of components
For test circuit see
Figure 2.
Component
C2, C8, C12
C3, C7, C11
C9, C13
R1
Description
Value
Remarks
ATC 100B
Murata:
GRM55DR61H106KA88L
ATC 100B
SMD 0603
C1, C4, C5, C6, C10 multilayer ceramic chip capacitor 56 pF
multilayer ceramic chip capacitor 10
F
multilayer ceramic chip capacitor 910 pF
electrolytic capacitor
resistor
100
F,
63 V
5
BLL9G1214L-600_LS-600
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 27 November 2017
5 of 13
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