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1R5JU41

Description
1.5 A, 600 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size155KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

1R5JU41 Overview

1.5 A, 600 V, SILICON, RECTIFIER DIODE

1R5JU41 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
package instructionPLASTIC, 3-4B1A, 2 PIN
Contacts2
Reach Compliance Codeunknown
Is SamacsysN
Other featuresFORMED LEAD OPTIONS ARE AVAILABLE
applicationFAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)2 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current44 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse current100 µA
Maximum reverse recovery time0.1 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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