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RJK1002DPN-E0#T2

Description
MOSFET N-CH 100V 70A TO220
Categorysemiconductor    Discrete semiconductor   
File Size77KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric View All

RJK1002DPN-E0#T2 Overview

MOSFET N-CH 100V 70A TO220

RJK1002DPN-E0#T2 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)100V
Current - Continuous Drain (Id) at 25°C70A(Ta)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs7.6 milliohms @ 35A, 10V
Vgs (th) (maximum value) when different Id-
Gate charge (Qg) at different Vgs (maximum value)94nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)6450pF @ 10V
FET function-
Power dissipation (maximum)150W(Tc)
Operating temperature150°C(TJ)
Installation typeThrough hole
Supplier device packagingTO-220AB
Package/casingTO-220-3
Preliminary
Datasheet
RJK1002DPN-E0
N-Channel MOS FET
100 V, 70 A, 7.6 m
Features
High speed switching
Low drive current
Low on-resistance R
DS(on)
= 6.0 m typ. (at V
GS
= 10 V)
Package TO-220AB
R07DS0620EJ0200
Rev.2.00
Aug 24, 2012
Outline
RENESAS Package code: PRSS0004AG-A
(Package name: TO-220AB)
4
2, 4
D
1G
1
1. Gate
2. Drain
3. Source
4. Drain
S
3
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
Note2
I
AP
Note2
E
AS
Pch
Note3
ch-c
Tch
Tstg
Note1
Ratings
100
±20
70
210
70
35
123
150
0.83
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at L = 100
H,
Tch = 25C, Rg
50
,
3. Tc = 25C
R07DS0620EJ0200 Rev.2.00
Aug 24, 2012
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