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RJK5013DPE-00#J3

Description
MOSFET N-CH 500V 14A LDPAK
CategoryDiscrete semiconductor    The transistor   
File Size84KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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RJK5013DPE-00#J3 Overview

MOSFET N-CH 500V 14A LDPAK

RJK5013DPE-00#J3 Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it Rohs certified?conform to
Parts packaging codeLDPAK(S)-(1)
package instruction,
Contacts4
Manufacturer packaging codePRSS0004AE-B4
Reach Compliance Codecompliant
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Preliminary
Datasheet
RJK5013DPE
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
R
DS(on)
= 0. 385
typ. (at I
D
= 7 A, V
GS
= 10 V, Ta = 25
C)
Low leakage current
High speed switching
R07DS0487EJ0300
(Previous: REJ03G1488-0200)
Rev.3.00
Jun 29, 2011
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
D
4
1. Gate
2. Drain
3. Source
4. Drain
1
G
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
3. STch = 25C, Tch
150C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
APNote3
E
ARNote3
Pch
ch-c
Tch
Tstg
Note2
Ratings
500
30
14
42
14
42
4
0.88
100
1.25
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0487EJ0300 Rev.3.00
Jun 29, 2011
Page 1 of 6

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