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RJK5031DPD-00#J2

Description
MOSFET N-CH 500V 3A MP3A
Categorysemiconductor    Discrete semiconductor   
File Size74KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric View All

RJK5031DPD-00#J2 Overview

MOSFET N-CH 500V 3A MP3A

RJK5031DPD-00#J2 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)500V
Current - Continuous Drain (Id) at 25°C3A(Ta)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs3.2 ohms @ 1.5A, 10V
Vgs (th) (maximum value) when different Id-
Vgs (maximum value)±30V
Input capacitance (Ciss) at different Vds (maximum value)280pF @ 25V
FET function-
Power dissipation (maximum)40.3W(Tc)
Operating temperature150°C(TJ)
Installation typesurface mount
Supplier device packagingMP-3A
Package/casingTO-252-3, DPak (2 leads + tab), SC-63
Preliminary
Datasheet
RJK5031DPD
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-state resistance
R
DS(on)
= 2.4
typ. (at I
D
= 1.5 A, V
GS
= 10 V, Ta = 25C)
High speed switching
R07DS0417EJ0200
Rev.2.00
Feb 24, 2012
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name : MP-3A)
4
1.
2.
3.
4.
Gate
Drain
Source
Drain
D
G
12
3
S
Absolute Maximum Ratings
(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Avalanche current
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. Value at Tc = 25C
3. STch = 25C, Tch
150C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
Note3
I
AP
Pch
Note 2
ch-c
Tch
Tstg
Note1
Value
500
30
3
12
3
40.3
3.1
150
–55 to +150
Unit
V
V
A
A
A
W
C/W
C
C
R07DS0417EJ0200 Rev.2.00
Feb 24, 2012
Page 1 of 6
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