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1PMT22AT3G

Description
200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-216AA
CategoryDiscrete semiconductor    diode   
File Size114KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
Download Datasheet Parametric View All

1PMT22AT3G Overview

200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-216AA

1PMT22AT3G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
Parts packaging codeDO-216AA
package instructionR-PDSO-G2
Contacts2
Manufacturer packaging codeCASE 457
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Maximum breakdown voltage26.9 V
Minimum breakdown voltage24.4 V
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-216AA
JESD-30 codeR-PDSO-G2
Maximum non-repetitive peak reverse power dissipation1000 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage22 V
Maximum repetitive peak reverse voltage22 V
surface mountYES
technologyZENER
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance4.7%
Working test current1 mA
Base Number Matches1
1PMT5.0AT1G/T3G Series
Zener Transient
Voltage Suppressor
POWERMITE
®
Package
The 1PMT5.0AT1G/T3G Series is designed to protect voltage
sensitive components from high voltage, high energy transients.
Excellent clamping capability, high surge capability, low Zener
impedance and fast response time. The advanced packaging
technique provides for a highly efficient micro miniature, space
saving surface mount with its unique heatsink design. The
POWERMITE has the same thermal performance as the SMA while
being 50% smaller in footprint area, and delivering one of the lowest
height profiles (1.1 mm) in the industry. Because of its small size, it
is ideal for use in cellular phones, portable devices, business
machines, power supplies and many other industrial/consumer
applications.
Specification Features:
http://onsemi.com
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSOR
5
58 V
200 W PEAK POWER
1
1: CATHODE
2: ANODE
2
Stand−off Voltage: 5.0 V
58 V
Peak Power
200 W @ 1 ms (1PMT5.0A
1PMT36A)
175 W @ 1 ms (1PMT40A
1PMT58A)
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage
Response Time is Typically < 1 ns
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Low Profile
Maximum Height of 1.1 mm
Integral Heatsink/Locking Tabs
Full Metallic Bottom Eliminates Flux Entrapment
Small Footprint
Footprint Area of 8.45 mm
2
POWERMITE is JEDEC Registered as DO−216AA
Lead Orientation in Tape: Cathode (Short) Lead to Sprocket Holes
Cathode Indicated by Polarity Band
These Devices are Pb−Free and are RoHS Compliant
1
POWERMITE
CASE 457
2
MARKING DIAGRAM
M
MxxG
1
CATHODE
M
Mxx
G
2
ANODE
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
= Date Code
= Specific Device Code
(See Table on Page 3)
= Pb−Free Package
readily solderable
MOUNTING POSITION:
Any
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
Device
ORDERING INFORMATION
Package
POWERMITE
(Pb−Free)
Shipping
3,000/Tape & Reel
260°C for 10 Seconds
1PMTxxAT1G
1PMTxxAT3G
POWERMITE 12,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
May, 2013
Rev. 10
1
Publication Order Number:
1PMT5.0AT3/D

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