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1N6299C

Description
TVS DIODE, DO-201AE
CategoryDiscrete semiconductor    diode   
File Size99KB,3 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

1N6299C Overview

TVS DIODE, DO-201AE

1N6299C Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
Breakdown voltage nominal value150 V
Maximum clamping voltage215 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
Humidity sensitivity level1
Peak Reflow Temperature (Celsius)260
polarityBIDIRECTIONAL
Maximum repetitive peak reverse voltage121 V
surface mountNO
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
1.5KE SERIES
Transient Voltage Suppressor Diodes
Voltage Range
6.8 to 440 Volts
1500 Watts Peak Power
5.0 Watts Steady State
Features
UL Recognized File # E-96005
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Exceeds environmental standards of MIL-STD-19500
1500W surge capability at 10 x 100 us waveform, duty cycle:
0.01%
Excellent clamping capability
Low zener impedance
Fast response time: Typically less than 1.0ps from 0 volts to
VBR for unidirectional and 5.0 ns for bidirectional
Typical I
R
less than 1uA above 10V
High temperature soldering guaranteed: 260°C / 10 seconds
/ .375”,(9.5mm) lead length / 5lbs.,(2.3kg) tension
DO-201
Mechanical Data
Case: Molded plastic
Lead: Axial leads, solderable per MIL-STD-202,
Lead:
Method 208
Polarity: Color band denotes cathode except bipolar
Weight: 0.94gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
P
eak
P
ower
D
issipation at
T
A
=25 C, Tp=1ms
(
N
ote 1)
O
Symbol
P
PK
P
D
I
FSM
V
F
T
J
, T
STG
Value
Minimum1500
5.0
200
3.5 / 5.0
-55 to + 175
O
Units
Watts
Watts
Amps
Volts
°C
Steady State Power Dissipation at T
L
=75 °C
Lead Lengths .375”, 9.5mm (Note 2)
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method) (Note 3)
Maximum Instantaneous Forward Voltage at
50.0A for Unidirectional Only (Note 4)
Operating and Storage Temperature Range
Notes: 1. Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25 C Per Fig. 2.
Notes:
2. Mounted on Copper Pad Area of 0.8 x 0.8” (20 x 20 mm) Per Fig. 4.
Notes:
3. 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per Minutes
Notes: 3.
Maximum.
Notes:
4. V
F
=3.5V for Devices of V
BR
200V and V
F
=5.0V Max. for Devices V
BR
>200V.
Devices for Bipolar Applications
Notes:
1. For Bidirectional Use C or CA Suffix for Types 1.5KE6.8 through Types 1.5KE440.
Notes:
2. Electrical Characteristics Apply in Both Directions.
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