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JANTXV2N4236

Description
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size245KB,5 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANTXV2N4236 Overview

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN

JANTXV2N4236 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1938018220
package instructionTO-39, 3 PIN
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-205AD
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusNot Qualified
GuidelineMIL-19500/580
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
2N4234 – 2N4236
Qualified Levels:
JAN, JANTX and
JANTXV
Available on
commercial
versions
PNP Power Amplifier Silicon Transistor
Qualified per MIL-PRF-19500/580
DESCRIPTION
This family of 2N4234, 2N4235, and 2N4236 silicon transistors are military qualified up to the
JANTXV level for high-reliability applications.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
JEDEC registered 2N4234 and 2N4236 number
JAN, JANTX, and JANTXV qualifications available per MIL-PRF-19500/580
RoHS compliant version available
TO-205AD
(formerly TO-39)
Package
APPLICATIONS / BENEFITS
Short leaded TO-205AD package
Lightweight package
Military and other high-reliability applications
MAXIMUM RATINGS
@ T
A
= +25 °C unless otherwise noted
Parameters / Test Conditions
Junction & Storage Temperature
Thermal Resistance Junction-to-Case
Thermal Resistance Junction-to-Ambient
(1)
Total Power Dissipation
Collector – Emitter Voltage
Symbol
T
J
, T
stg
R
ӨJC
R
ӨJA
@ T
A
= 25 ºC
(2)
@ T
C
= 25 ºC
2N4234
2N4235
2N4236
2N4234
2N4235
2N4236
(1)
Value
-65 to +200
29
175
1.0
6.0
-40
-60
-80
-40
-60
-80
-7.0
-0.5
-1.0
Unit
°C
ºC/W
ºC/W
W
V
P
T
V
CEO
Collector – Base Voltage
V
CBO
V
EBO
I
B
I
C
V
V
A
A
Emitter - Base Voltage
Base Current
Collector Current
Notes:
1. Derated linearly by 5.7 mW/°C for T
A
> +25 °C
2. Derated linearly by 34 mW/°C for T
C
> +25 °C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0319, Rev. 1 (9/25/13)
©2013 Microsemi Corporation
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