FDMC510P P-Channel PowerTrench
®
MOSFET
FDMC510P
P-Channel PowerTrench
®
MOSFET
-20 V, -18 A, 8.0 mΩ
Features
Max r
DS(on)
= 8.0 mΩ at V
GS
= -4.5 V, I
D
= -12 A
Max r
DS(on)
= 9.8 mΩ at V
GS
= -2.5 V, I
D
= -10 A
Max r
DS(on)
= 13 mΩ at V
GS
= -1.8 V, I
D
= -9.3 A
Max r
DS(on)
= 17 mΩ at V
GS
= -1.5 V, I
D
= -8.3 A
High performance trench technology for extremely low r
DS(on)
High power and current handling capability in a widely used
surface mount package
100% UIL Tested
Termination is Lead-free and RoHS Compliant
HBM ESD capability level >2 KV typical (Note 4)
Top
Pin 1
S
S
S
G
Bottom
General Description
using
ON
This P-Channel MOSFET is produced
®
Semiconductor’s advanced Power Trench process that has
been optimized for r
DS(ON)
, switching performance and
ruggedness.
Applications
Battery Management
Load Switch
D
D
D
D
MLP 3.3x3.3
MOSFET Maximum Ratings
T
A
= 25 °C unless otherwise noted
Symbol
V
DS
V
GS
I
D
E
AS
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
T
C
= 25 °C
T
A
= 25 °C
(Note 1a)
T
C
= 25 °C
T
A
= 25 °C
(Note 1a)
Parameter
Ratings
-20
±8
-18
-12
-50
37
41
2.3
-55 to +150
mJ
W
°C
A
Units
V
V
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
3
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC510P
Device
FDMC510P
Package
MLP 3.3X3.3
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
Publication Order Number:
FDMC510P/D
©2010
Semiconductor Components Industries, LLC.
October-2017,
Rev.
3
FDMC510P P-Channel PowerTrench
®
MOSFET
Electrical Characteristics
T
J
= 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
ΔBV
DSS
ΔT
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= -250
μA,
V
GS
= 0 V
I
D
= -250
μA,
referenced to 25 °C
V
DS
= -16 V, V
GS
= 0 V
V
GS
= ±8 V, V
DS
= 0 V
-20
-12
-1
±100
V
mV/°C
μA
nA
On Characteristics
V
GS(th)
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= -250
μA
I
D
= -250
μA,
referenced to 25 °C
V
GS
= -4.5 V, I
D
= -12 A
V
GS
= -2.5 V, I
D
= -10 A
r
DS(on)
Static Drain to Source On Resistance
V
GS
= -1.8 V, I
D
= -9.3 A
V
GS
= -1.5 V, I
D
= -8.3 A
V
GS
= -4.5 V, I
D
= -12 A, T
J
= 125 °C
g
FS
Forward Transconductance
V
DS
= -5 V, I
D
= -12 A
-0.4
-0.5
3
6.4
7.6
9.2
11
8.5
75
8.0
9.8
13
17
12
S
mΩ
-1.0
V
mV/°C
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= -10 V, V
GS
= 0 V,
f = 1 MHz
5910
840
738
7860
1120
1110
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
GS
= 0 V to -4.5 V
V
GS
= 0 V to -2.5 V V
DD
= -10 V,
I
D
= -12 A
V
DD
= -10 V, I
D
= -12 A,
V
GS
= -4.5 V, R
GEN
= 6
Ω
15
34
338
170
83
50
6.3
20.4
27
55
540
272
116
70
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= -12 A
V
GS
= 0 V, I
S
= -2 A
I
F
= -12 A, di/dt = 100 A/μs
(Note 2)
(Note 2)
-0.70
-0.53
35
20
-1.3
-1.2
57
32
V
ns
nC
Notes:
1:
R
θJA
is determined with the device mounted on a 1 in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJC
is guaranteed by design while R
θJA
is determined
by the user’s board design.
a. 53 °C/W when mounted on
a 1 in
2
pad of 2 oz copper
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper
2:
Pulse Test: Pulse Width < 300
μs,
Duty cycle < 2.0%.
3:
Starting T
J
= 25
o
C; P-Ch: L = 3 mH, I
AS
= -5 A, V
DD
= -20 V, V
GS
= -4.5 V.
4:
No gate overvoltage rating is implied.
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2
FDMC510P P-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25 °C unless otherwise noted
50
V
GS
= - 1.5 V
-I
D
,
DRAIN CURRENT (A)
5
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
40
V
GS
= -4.5 V
4
V
GS
= -1.2 V
30
20
10
0
0.0
V
GS
= -2.5 V
V
GS
= -1.8 V
3
V
GS
= -1.5 V
2
1
V
GS
= -2.5 V
V
GS
= -1.8 V
V
GS
= -1.2 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
= -4.5 V
0
0
10
20
30
40
50
-I
D
,
DRAIN CURRENT (A)
0.5
1.0
1.5
-V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
2.0
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
25
SOURCE ON-RESISTANCE
(
m
Ω
)
1.5
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-75
I
D
= -12 A
V
GS
= -4.5 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
20
I
D
= -12 A
r
DS(on)
, DRAIN TO
15
T
J
= 125
o
C
10
5
0
1.0
T
J
= 25
o
C
-50
-25
0
25 50 75 100 125 150
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-V
GS
,
GATE TO SOURCE VOLTAGE
(
V
)
Figure 3. Normalized On Resistance
vs. Junction Temperature
50
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
-I
S
, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance vs. Gate to
Source Voltage
100
V
GS
= 0 V
-I
D
, DRAIN CURRENT (A)
40
V
DS
= -5 V
10
T
J
= 150
o
C
30
T
J
= 150
o
C
1
T
J
= 25
o
C
20
T
J
= 25
o
C
10
T
J
= -55
o
C
0.1
T
J
= -55
o
C
0
0.0
0.5
1.0
1.5
2.0
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
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FDMC510P P-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25 °C unless otherwise noted
4.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= -12 A
20000
10000
CAPACITANCE (pF)
C
iss
3.0
V
DD
= -8 V
V
DD
= -12 V
V
DD
= -10 V
1.5
C
oss
1000
f = 1 MHz
V
GS
= 0 V
C
rss
0.0
0
20
40
60
80
100
Q
g
, GATE CHARGE (nC)
400
0.1
1
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
20
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
to Source Voltage
60
-
I
D
,
DRAIN CURRENT (A)
50
V
GS
= -4.5 V
20
-I
AS
, AVALANCHE CURRENT (A)
10
T
J
= 25
o
C
T
J
= 100
o
C
40
V
GS
= -2.5 V
30
20
10
Limited by Package
R
θ
JC
= 3 C/W
o
T
J
= 125
o
C
1
0.1
1
10
100
1000
0
25
50
75
100
o
125
150
t
AV
, TIME IN AVALANCHE (ms)
T
C
,
CASE TEMPERATURE
(
C
)
Figure 9. Unclamped Inductive
Switching Capability
100
100 us
-I
D
, DRAIN CURRENT (A)
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
1000
P
(
PK
)
,
PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
θ
JA
= 125
o
C/W
10
1 ms
10 ms
100
T
A
= 25
o
C
1
THIS AREA IS
LIMITED BY r
DS(on)
100 ms
1s
10 s
DC
10
0.1
SINGLE PULSE
T
J
= MAX RATED
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
1
0.5
-4
10
10
-3
0.01
0.01
0.1
1
10
80
10
-2
10
-1
1
10
100
1000
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
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FDMC510P P-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25 °C unless otherwise noted
2
1
NORMALIZED THERMAL
IMPEDANCE, Z
θ
JA
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
0.01
SINGLE PULSE
R
θ
JA
= 125 C/W
o
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJA
x R
θJA
+ T
A
-1
0.001
-4
10
10
-3
10
-2
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
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