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RB160A90T-32

Description
DIODE SCHOTTKY 90V 1A MSR
CategoryDiscrete semiconductor    diode   
File Size111KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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RB160A90T-32 Overview

DIODE SCHOTTKY 90V 1A MSR

RB160A90T-32 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.73 V
Maximum non-repetitive peak forward current50 A
Number of components1
Maximum operating temperature150 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage90 V
surface mountNO
technologySCHOTTKY
Base Number Matches1
RB160A90
Diodes
Schottky barrier diode
RB160A90
Applications
General rectification
Dimensions
(Unit : mm)
CATHODE BAND
φ0.6±0.1
Features
1) Cylindrical mold type. (MSR)
2) High I surge capability.
3) Low I
R
.
4) High ESD.
29±1
3.0±0.2
8
29±1
φ2.5±0.2
ROHM : MSR
Manufacture Date
Construction
Silicon epitaxial planar
Taping specifications
(Unit : mm)
BROWN
H2
A
BLUE
E
Symbol
Standard dimension
value(mm)
B
C
L1
H1
F
L2
D
T-31   52.4±1.5
+0.4
T-32
26.0 0
T-31   5.0±0.5
B
T-31
5.0±0.3
T-31
C
1.0 max.
T-32
T-31
D
0
T-32
T-31
1/2A±1.2
E
T-32
1/2A±0.4
T-31
±0.7
T-32
0.2 max.
T-31
H1
6.0±0.5
T-32
T-31
H2
5.0±0.5
T-32
T-31
1.5 max.
|L1-L2|
T-32
0.4 max.
*H1(6mm):BROWN
Absolute maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak
(t=100µs)
Junction temperature
Storage temperature
Symbol
V
RM
V
R
Io
I
FSM
Tj
Tstg
(*1) Mounted on epoxy board. 180°Half sine wave
Limits
90
90
1
50
150
-55 to +150
Unit
V
V
A
A
Electrical characteristics
(Ta=25°C)
Parameter
Forward voltage
Reverse current
ESD break down voltage
Symbol
V
F
I
R
ESD
Min.
0.54
-
5
Typ.
0.64
5.00
-
Max.
0.73
100
-
Unit
V
µA
kV
Conditions
I
F
=1.0A
V
R
=90V
C=100pF,R=1.5kΩ forward and reverse : 1 time
Rev.D
1/3

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