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BBY5802WH6327XTSA1

Description
DIODE TUNING 10V 20MA SCD80
CategoryDiscrete semiconductor    diode   
File Size113KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BBY5802WH6327XTSA1 Overview

DIODE TUNING 10V 20MA SCD80

BBY5802WH6327XTSA1 Parametric

Parameter NameAttribute value
MakerInfineon
package instructionR-PDSO-F2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresLOW INDUCTANCE
Minimum breakdown voltage10 V
ConfigurationSINGLE
Diode Capacitance Tolerance4.89%
Minimum diode capacitance ratio1.15
Nominal diode capacitance18.3 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-F2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Varactor Diode ClassificationHYPERABRUPT
Base Number Matches1
BBY58...
Silicon Tuning Diodes
Excellent linearity
High Q hyperabrupt tuning diode
Low series resistance
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
For low frequency control elements
such as TCXOs and VCXOs
Very low capacitance spread
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
BBY58-02L/V
BBY58-02W
BBY58-03W
BBY58-05W
BBY58-06W
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Type
BBY58-02L
BBY58-02V
BBY58-02W
BBY58-03W
BBY58-05W
BBY58-06W
Package
TSLP-2-1
SC79
SCD80
SOD323
SOT323
SOT323
Configuration
single, leadless
single
single
single
common cathode
common anode
L
S
(nH)
0.4
0.6
0.6
0.6
1.4
1.4
Marking
88
8
88
8 yel.
B5s
B6s
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
1
Pb-containing
Symbol
V
R
I
F
T
op
T
stg
Value
10
20
-55 ... 150
-55 ... 150
Unit
V
mA
°C
package may be available upon special request
1
2007-09-19

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