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BG3123RH6327XTSA1

Description
MOSFET N-CH DUAL 8V 25MA SOT363
CategoryDiscrete semiconductor    The transistor   
File Size98KB,12 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BG3123RH6327XTSA1 Overview

MOSFET N-CH DUAL 8V 25MA SOT363

BG3123RH6327XTSA1 Parametric

Parameter NameAttribute value
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G6
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW NOISE
Minimum drain-source breakdown voltage12 V
Maximum drain current (ID)0.02 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Operating modeDUAL GATE, DEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
BG3123...
DUAL N-Channel MOSFET Tetrode
Two gain controlled input stages for UHF
and VHF -tuners e.g. (NTSC, PAL)
Optimized for UHF (amp. B) and VHF (amp. A)
Integrated gate protection diodes
High AGC-range, low noise figure, high gain
Improved cross modulation at gain reduction
Pb-free (RoHS compliant) package
Qualified according AEC Q101
4
5
6
1
2
3
BG3123
$
#
"
BG3123R
6
5
4
*
)

!
B
A
1
2
3
Drain
AGC
RF
Input RG1
VGG
G2
G1
RF Output
+ DC
GND
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BG3123
BG3123R
Package
SOT363
SOT363
1=G1* 2=G2
1=G1* 2=S
Pin Configuration
3=D*
3=D*
4=D**
4=D**
5=S
5=G2
Marking
6=G1** KOs
6=G1** KRs
* For amp. A; ** for amp. B
180° rotated tape loading orientation available
1
2007-04-26

BG3123RH6327XTSA1 Related Products

BG3123RH6327XTSA1 BG3123-E6433 BG3123H6327XTSA1 BG3123E6327HTSA1
Description MOSFET N-CH DUAL 8V 25MA SOT363 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET MOSFET N-CH DUAL 8V 25MA SOT363 MOSFET N-CH DUAL 8V 25MA SOT-363
Maker Infineon Infineon Infineon -
Reach Compliance Code compliant compliant compliant -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
Operating mode DUAL GATE, DEPLETION MODE DUAL GATE, ENHANCEMENT MODE DUAL GATE, DEPLETION MODE -
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL -
surface mount YES YES YES -
Base Number Matches 1 1 1 -
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