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1N5237B

Description
8.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
CategoryDiscrete semiconductor    diode   
File Size102KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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1N5237B Overview

8.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35

1N5237B Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeDO-35
package instructionO-LALF-W2
Contacts2
Manufacturer packaging codeAXIAL LEADED; GLASS; JEDEC DO204 ; VARIATION AH
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance8 Ω
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage8.2 V
surface mountNO
technologyZENER
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5%
Working test current20 mA
1N5221B - 1N5279B Zeners
November 2006
1N5221B - 1N5279B
Zeners
tm
Absolute Maximum Ratings*
T =25°C unless otherwise noted
a
Tolerance = 5%
Symbol
P
D
T
STG
T
J
Parameter
Power Dissipation
Derate above 50°C
Storage Temperature Range
Maximum Junction Operating Temperature
Lead Temperature (1/16” from case for 10 seconds)
Value
500
4.0
-65 to +200
+200
+230
Units
mW
mW°C
°C
°C
°C
DO-35 Glass case
COLOR BAND DENOTES CATHODE
* These ratings are limiting values above which the serviceability of the diode may be impaired.
** Non-recurrent square wave PW = 8.3ms, Ta = 50 degrees C.
Electrical Characteristics
Device
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
1N5246B
1N5247B
1N5248B
1N5249B
1N5250B
V
Z
(V) @ I
Z
(Note 1)
Min.
2.28
2.375
2.565
2.66
2.85
3.135
3.42
3.705
4.085
4.465
4.845
5.32
5.7
5.89
6.46
7.125
7.79
8.265
8.645
9.5
10.45
11.4
12.35
13.3
14.25
15.2
16.15
17.1
18.05
19
Typ.
2.4
2.5
2.7
2.8
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
T
A
=25°C unless otherwise noted
Max.
2.52
2.625
2.835
2.94
3.15
3.465
3.78
4.095
4.515
4.935
5.355
5.88
6.3
6.51
7.14
7.875
8.61
9.135
9.555
10.5
11.55
12.6
13.65
14.7
15.75
16.8
17.85
18.9
19.95
21
Z
Z
(Ω) @ I
Z
(mA)
30
30
30
30
29
28
24
23
22
19
17
11
7.0
7.0
5.0
6.0
8.0
8.0
10
17
22
30
13
15
16
17
19
21
23
25
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9.0
8.5
7.8
7.4
7.0
6.6
6.2
Z
ZK
(Ω) @ I
ZK
(mA)
1,200
1,250
1,300
1,400
1,600
1,600
1,700
1,900
2,000
1,900
1,600
1,600
1,600
1,000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
I
R
(µA) @ V
R
(V)
T
C
(%/°C)
-0.085
-0.085
-0.080
-0.080
-0.075
-0.07
-0.065
-0.06
+/-0.055
+/-0.03
+/-0.03
0.038
0.038
0.045
0.05
0.058
0.062
0.065
0.068
0.075
0.076
0.077
0.079
0.080
0.082
0.083
0.084
0.085
0.085
0.086
100
100
75
75
50
25
15
10
5.0
2.0
5.0
5.0
5.0
5.0
3.0
3.0
3.0
3.0
3.0
3.0
2.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
3.0
3.5
4.0
5.0
6.0
6.5
6.5
7.0
8.0
8.4
9.1
9.9
10
11
12
13
14
14
15
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
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