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1N4005

Description
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size92KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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1N4005 Overview

1 A, 600 V, SILICON, SIGNAL DIODE, DO-41

1N4005 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPLASTIC PACKAGE-2
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingNOT SPECIFIED
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typeSignal diode
Maximum repetitive peak reverse voltage600 V
Maximum average forward current1 A
NOT RECOMMENDED FOR NEW DESIGN
USE S1A-S1M series
1N4001 - 1N4007
1.0A RECTIFIER
Features
Diffused Junction
High Current Capability and Low Forward Voltage Drop
Surge Overload Rating to 30A Peak
Low Reverse Leakage Current
Lead Free Finish, RoHS Compliant (Note 3)
Mechanical Data
Case: DO-41
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Bright Tin. Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Ordering Information: See Page 2
Marking: Type Number
Weight: 0.30 grams (Approximate)
Dim
DO-41 Plastic
Min
Max
A
25.40
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
(@T
A
= +25°C unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
V
RRM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
V
RWM
DC Blocking Voltage
V
R
RMS Reverse Voltage
V
R(RMS)
Average Rectified Output Current (Note 1) @ T
A
=+75C
I
O
Non-Repetitive Peak Forward Surge Current 8.3ms
I
FSM
Single Half Sine-Wave Superimposed on Rated Load
Forward Voltage @ I
F
= 1.0A
V
FM
Peak Reverse Current @T
A
= +25C
I
RM
at Rated DC Blocking Voltage @ T
A
= +100C
Typical Junction Capacitance (Note 2)
C
j
Typical Thermal Resistance Junction to Ambient
R
JA
Maximum DC Blocking Voltage Temperature
T
A
Operating and Storage Temperature Range
T
J
,
T
STG
Notes:
1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007
50
35
100
70
200
140
400
280
1.0
30
1.0
5.0
50
15
100
+150
-65 to +150
8
600
420
800
560
1000
700
Unit
V
V
A
A
V
A
pF
K/W
C
C
1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
1N4001-1N4007
Document number: DS28002 Rev. 9 - 3
1 of 3
www.diodes.com
September 2014
© Diodes Incorporated
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