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SSM6N16FUTE85LF

Description
MOSFET 2N-CH 20V 0.1A US6
Categorysemiconductor    Discrete semiconductor   
File Size162KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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SSM6N16FUTE85LF Overview

MOSFET 2N-CH 20V 0.1A US6

SSM6N16FUTE85LF Parametric

Parameter NameAttribute value
FET type2 N-channel (dual)
FET functionstandard
Drain-source voltage (Vdss)20V
Current - Continuous Drain (Id) at 25°C100mA
Rds On (maximum value) when different Id, Vgs3 ohms @ 10mA, 4V
Vgs (th) (maximum value) when different Id1.1V @ 100µA
Gate charge (Qg) at different Vgs (maximum value)-
Input capacitance (Ciss) at different Vds (maximum value)9.3pF @ 3V
Power - Max200mW
Operating temperature150°C(TJ)
Installation typesurface mount
Package/casing6-TSSOP,SC-88,SOT-363
Supplier device packagingUS6
SSM6N16FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N16FU
High Speed Switching Applications
Analog Switch Applications
Suitable for high-density mounting due to compact package
Low on resistance: R
on
= 3.0
(max) (@V
GS
= 4 V)
: R
on
= 4.0
(max) (@V
GS
= 2.5 V)
: R
on
= 15
(max) (@V
GS
= 1.5 V)
Unit: mm
(Q1, Q2 Common)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
20
±10
100
200
200
150
−55~150
Unit
V
V
mA
mW
°C
°C
Drain power dissipation (Ta
=
25°C)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
2-2J1C
Note:
Using continuously under heavy loads (e.g. the application of
Weight:
g
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking
6
5
4
Equivalent Circuit
6
5
4
Q1
DS
Q2
1
2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Start of commercial production
2001-03
1
2014-03-01

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