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BAS40DW-04-TP

Description
DIODE ARRAY SCHOTTKY 40V SOT363
Categorysemiconductor    Discrete semiconductor   
File Size243KB,3 Pages
ManufacturerMicro Commercial Co
Environmental Compliance
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BAS40DW-04-TP Overview

DIODE ARRAY SCHOTTKY 40V SOT363

BAS40DW-04-TP Parametric

Parameter NameAttribute value
Diode configuration2 pairs in series
Diode typeSchottky
Voltage - DC Reverse (Vr) (Maximum)40V
Current - average rectification (Io) (per diode)200mA
Voltage at different If - Forward (Vf1V @ 40mA
speedSmall signal =< 200mA (Io), any speed
Reverse recovery time (trr)5ns
Current at different Vr - Reverse leakage current200nA @ 30V
Operating Temperature - Junction-55°C ~ 125°C
Installation typesurface mount
Package/casing6-TSSOP,SC-88,SOT-363
Supplier device packagingSOT-363
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BAS40TW/DW-04/
DW-05 /DW-06 /BRW
200mW
SCHOTTKY BARRIER
Diode
SOT-363
G
Features
Fast Switching
Low Forward Voltage Drop
Low Power Dissipation
Ultra-Small Surface Mount Package
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
Halogen
free available upon request by adding suffix "-HF"
Maximum Ratings
Symbol
V
RRM
V
RWM
V
R
Io
R
©
JA
P
D
T
J
T
STG
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current
Thermal Resistance Junction to Ambient
Power dissipation
Junction Temperature
Storage Temperature
Rating
40
Unit
V
200
mA
/W
625
200
mW
-55 to +125------------
-65 to +125
B
C
A
H
K
J
D
L
M
NEW PRODUCT
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
V
(BR)
Parameter
Reverse breakdown voltage
Reverse Voltage Leakage
Current
40V
---
Min
Max
Test Conditions
DIMENSIONS
INCHES
DIM
A
B
C
D
G
H
J
K
L
M
MIN
.006
.045
.085
.026
.047
.071
---
.035
.010
.003
.055
.087
.004
.043
.018
.006
MAX
.014
.053
.096
MM
MIN
MAX
0.15
0.35
1.15
1.35
2.15
2.45
0.65Nominal
1.20
1.40
1.80
2.20
---
0.10
0.90
1.10
0.26
0.46
0.08
0.15
-----
200nA
I
R
= 10
µ
A
V
R
=30V
NOTE
I
R
V
F
C
T
t
rr
Forward Voltage
Total Capacitance
Reverse Recovery Time
---
---
---
---
0.38V
1.0V
5pF
5.0ns
I
F
=1mA
I
F
=40mA
V
R
=0V, f=1MHZ
I
F
=10mA,I
R
=I
F
=1mA
R
L
=100
A
1
C
2
C
2
C
1
A
2
A
2
AC
1
C
2
A
2
AC
1
C
1
C
2
C
1
C
2
C
3
C
1
C
1
A
2
A
1
A
1
C
2
A
1
C
1
AC
2
A
1
A
2
AC
2
A
1
A
2
A
3
BAS40DW-06
Marking: K461
BAS40DW-05
Marking: K45
BAS40DW-04
Marking: K44
BAS40BRW
Marking: K47
BAS40TW
Marking: K43
www.mccsemi.com
Revision:
B
1 of 3
2013/01/01

BAS40DW-04-TP Related Products

BAS40DW-04-TP BAS40DW-06-TP BAS40BRW-TP BAS40DW-05-TP
Description DIODE ARRAY SCHOTTKY 40V SOT363 DIODE ARRAY SCHOTTKY 40V SOT363 DIODE ARRAY SCHOTTKY 40V SOT363 DIODE ARRAY SCHOTTKY 40V SOT363
Diode configuration 2 pairs in series 2 pairs of common anodes 2 pairs in series 2 pairs of common cathodes
Diode type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Maximum) 40V 40V 40V 40V
Current - average rectification (Io) (per diode) 200mA 200mA 200mA 200mA
Voltage at different If - Forward (Vf 1V @ 40mA 1V @ 40mA 1V @ 40mA 1V @ 40mA
speed Small signal =< 200mA (Io), any speed Small signal =< 200mA (Io), any speed Small signal =< 200mA (Io), any speed Small signal =< 200mA (Io), any speed
Reverse recovery time (trr) 5ns 5ns 5ns 5ns
Current at different Vr - Reverse leakage current 200nA @ 30V 200nA @ 30V 200nA @ 30V 200nA @ 30V
Operating Temperature - Junction -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C -55°C ~ 125°C
Installation type surface mount surface mount surface mount surface mount
Package/casing 6-TSSOP,SC-88,SOT-363 6-TSSOP,SC-88,SOT-363 6-TSSOP,SC-88,SOT-363 6-TSSOP,SC-88,SOT-363
Supplier device packaging SOT-363 SOT-363 SOT-363 SOT-363

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