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PSMN9R1-30YL,115

Description
MOSFET N-CH 30V 57A LFPAK
Categorysemiconductor    Discrete semiconductor   
File Size907KB,14 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
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PSMN9R1-30YL,115 Overview

MOSFET N-CH 30V 57A LFPAK

PSMN9R1-30YL,115 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)30V
Current - Continuous Drain (Id) at 25°C57A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)4.5V,10V
Rds On (maximum value) when different Id, Vgs9.1 milliohms @ 15A, 10V
Vgs (th) (maximum value) when different Id2.15V @ 1mA
Gate charge (Qg) at different Vgs (maximum value)16.7nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)894pF @ 15V
FET function-
Power dissipation (maximum)52W(Tc)
Operating temperature-55°C ~ 175°C(TJ)
Installation typesurface mount
Supplier device packagingLFPAK56,Power-SO8
Package/casingSC-100,SOT-669,4-LFPAK
PSMN9R1-30YL
N-channel 9.1 mΩ 30 V TrenchMOS logic level FET in LFPAK
Rev. 2 — 16 May 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
industrial and communications applications.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for logic level gate drive
sources
1.3 Applications
Class-D amplifiers
DC-to-DC converters
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
gate-drain charge
Conditions
T
j
25 °C; T
j
175 °C
T
mb
= 25 °C; V
GS
= 10 V;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
V
GS
= 10 V; I
D
= 15 A;
T
j
= 25 °C
V
GS
= 10 V; I
D
= 45 A;
V
DS
= 15 V; see
Figure 14;
see
Figure 15
V
GS
= 4.5 V; I
D
= 45 A;
V
DS
= 15 V; see
Figure 14;
see
Figure 15
V
GS
= 10 V; T
j(init)
= 25 °C;
I
D
= 57 A; V
sup
30 V;
R
GS
= 50
Ω;
unclamped
Min
-
-
-
-
Typ
-
-
-
7.8
Max Unit
30
57
52
9.1
V
A
W
mΩ
Static characteristics
Dynamic characteristics
Q
GD
-
4.1
-
nC
Q
G(tot)
total gate charge
-
8.4
-
nC
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
-
-
17
mJ
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