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TSM126CX RFG

Description
MOSFET N-CH 600V 30MA SOT23
Categorysemiconductor    Discrete semiconductor   
File Size594KB,7 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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TSM126CX RFG Overview

MOSFET N-CH 600V 30MA SOT23

TSM126CX RFG Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)600V
Current - Continuous Drain (Id) at 25°C30mA(Tc)
Drive voltage (maximum Rds On, minimum Rds On)0V,10V
Rds On (maximum value) when different Id, Vgs800 ohms @ 16mA, 10V
Vgs (th) (maximum value) when different Id1V @ 8µA
Gate charge (Qg) at different Vgs (maximum value)1.18nC @ 4.5V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)51.42pF @ 25V
FET functionexhaustion mode
Power dissipation (maximum)500mW(Ta)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Supplier device packagingSOT-23
Package/casingTO-236-3,SC-59,SOT-23-3
TSM126
N-Channel Depletion-Mode MOSFET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)(max)
600
700 @ V
GS
= 0V
I
D
(A)
0.03
Features
Depletion Mode
Low Gate Charge
Block Diagram
Application
Converters
Telecom
Ordering Information
Part No.
TSM126CX RFG
Package
SOT-23
Packing
3kpcs / 7” Reel
N-Channel MOSFET
Note:
“G” denotes Halogen Free Product.
Absolute Maximum Ratings
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
a
Symbol
V
DS
V
GS
Tc=25℃
Tc=70℃
I
D
I
DM
P
D
T
L
T
J
T
J
, T
STG
b
Limit
600
±20
0.030
0.024
0.120
0.5
300
+150
-55 to +150
Unit
V
V
A
A
A
W
o
o
o
Maximum Power Dissipation
Soldering Temperature
C
C
C
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Thermal Performance
Parameter
Thermal Resistance, Junction to Ambient
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Distance of 1.6mm from case for 10 seconds.
Symbol
JA
Limit
250
Unit
o
C/W
1/7
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